Abstract:In this paper, we present an effective synthetic protocol to produce high quality InN nanocrystals using indium iodide (InI3), one member of the family of indium halides, as the indium source at a low temperature of <250 degrees C (far below the decomposition temperature of InN). Notably, reports on InN synthesized from indium halides are rare due to the lack of well-defined synthetic protocols. Here, indium iodide (InI3), with a stronger covalent ability, can also prevent the In3+ from being reduced to elemental indium, and then InN is formed. This synthetic protocol not only provides an alternative method to successfully synthesize high-quality InN, but is also useful to fabricate other functional materials by using stronger covalent reactants to prevent reduction/oxidation in the oxidation/reduction reaction process, respectively. Furthermore, we also report the first example of an orientation-attachment process occurring between the metal nitride particles. The high purity of the InN nanoparticles can be seen from the XPS and HRTEM results, showing the as-obtained products possess no obvious iodine or amorphous layers on the surface of particles, respectively. By controlling the parameters of reaction temperature and time, nanoparticles with different sizes were obtained as the final products. Raman and IR results indicate that our experimental data were consistent with the theoretical prediction and this gives further evidence that high quality InN nanocrystals were obtained. Moreover, it has been shown that the near-infrared band around 0.7 eV is characteristic of these samples and there were no obvious peaks around 1.9 eV, indicating that these InN nanocrystals exhibit a band gap of 0.7 eV, rather than the previously accepted 1.9 eV.

Catalyst Synthesis and Growth of Indium Nitride Nanodots

Synthesis and Growth of InN with Pre-deposited Indium Nanodots Method on MOCVD at Low Temperature

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate

Initial Stages of the Cubic-Inn Growth with the Technique of the Pre-Deposition of Indium

Catalyst-free selective area growth of InN nanocolumns by MBE

Chemical Vapor Deposition Growth of Inn Nanostructures: Morphology Regulation and Field Emission Properties

Indium nitride from indium iodide at low temperatures: synthesis and their optical properties

Growth and Characterization of Self-Assembled Low-Indium Composition Ingan Nanodots by Alternate Admittance of Precursors

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Synthesis Of Long Indium Nitride Nanowires With Uniform Diameters In Large Quantities

Growth Study of Indium-Catalyzed Silicon Nanowires by Plasma Enhanced Chemical Vapor Deposition

Growth of In2O3 Nanowires Catalyzed by Cu Via a Solid–Liquid–Solid Mechanism

Growth of InN quantum dots to nanorods: A competition between nucleation and growth rates

Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

Initial Nucleation and Growth of In-Plane Solid-Liquid-solid Silicon Nanowires Catalyzed by Indium

Enhancing indium bilayer nitridation through novel hydrogen insertion process in InN epitaxy: A kinetic mechanism

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor

Kinetic growth of self-formed In2O3 nanodots via phase segregation: Ni/InAs system

First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES

The growth temperature dependence of In aggregation in two-step MOCVD grown InN films on sapphire