Abstract:Both well vertically aligned and uniformly separated (In)GaN nanorods (NRs) were successfully grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. Effects of supplied indium (In) flux on the morphology of (In)GaN NRs were investigated systematically. The scanning electron microscopic analysis and transmission electron microscopic measurements revealed that the presence of In flux can help to inhibit NR coalescence and obtain well-separated (In)GaN NRs. By increasing the supplied In flux, the densities of (In)GaN NRs decreased and the axial growth rates increased. According to the energy dispersive X-ray spectrometry measurements and theoretical calculations, the increase of In content of the NRs enhanced Ga diffusion on the NR sidewalls, which resulted in an increased axial growth rate. A kinetic In-assisted growth model for the well-separated (In)GaN NRs is therefore proposed. The model explains that the presence of In flux not only reduces the density of (In)GaN NRs due to the increase in substrate surface migration of Ga adatoms at nucleation stage but also lead to a remarkable enhancement of axial growth rate at growth stage. Consequently, the NR coalescence was significantly suppressed. The results provide a demonstration of obtaining well-separated (In)GaN NRs and open up further possibility of developing (In)GaN NR-based optoelectronic devices.

Growth and Characterization of Self-Assembled Low-Indium Composition Ingan Nanodots by Alternate Admittance of Precursors

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method

The Mechanism of Indium-Assisted Growth of (in)gan Nanorods: Eliminating Nanorod Coalescence by Indium-Enhanced Atomic Migration.

InGaN Nanocolumn Growth Self-Induced by In-Situ Annealing and Ion Irradiation During Growth Process with Molecular Beam Epitaxy Method

Growth and Characterization of InGaN Nanodots Hybrid with InGaN/GaN Quantum Wells

Catalyst Synthesis and Growth of Indium Nitride Nanodots

Abnormal InGaN Growth Behavior in Indium-Desorption Regime in Metalorganic Chemical Vapor Deposition

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition

Increasing the Indium Incorporation Efficiency During Ingan Layer Growth by Suppressing the Dissociation of Nh3

Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal–Organic Chemical Vapor Deposition

Anomalous Indium Incorporation and Optical Properties of High Indium Content InGaN Grown by MOCVD

Synthesis and Growth of InN with Pre-deposited Indium Nanodots Method on MOCVD at Low Temperature

Graphene‐Nanorod Enhanced Quasi‐Van Der Waals Epitaxy for High Indium Composition Nitride Films

Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping

Growth of InGaN Films on C-Plane Sapphire Substrates with an AlN Nucleation Layer by Using Metal-Organic Chemical-Vapor Deposition

Effects of Indium Surfactant on the Crystalline and Optical Properties of GaN During Initial Growth Stage

Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

Effect of Indium Doping on the Growth and Physical Properties of Ultrathin Nanosheets of Gainn/Zno Solid Solution

Evolution Mechanism of InGaN Quantum Dots and Their Optical Properties

Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation