Abstract:A controllable self-assembled growth using molecular beam epitaxy (MBE) of dense, uniform, and high-aspect-ratio InGaN nanorods (NRs) is achieved through regulating the Ga/In flux ratio and employing high Miller index planes of patterned sapphire substrates (PSSs). It is clearly demonstrated that both the low Ga/In flux ratio and high Miller index plane of PSS patterns facilitate the three-dimensional growth mode for InGaN NRs and simultaneously suppress NR coalescence. A lower Ga/In flux ratio favors a higher density, a larger aspect ratio, and a smaller coalescence degree of InGaN NRs through enhancing axial growth and inversely suppressing radial growth. The specific surface structures of high Miller index planes, e.g., the well-organized step-terrace and irregular bulge structures, critically affect the morphology, dimensions, density, and crystallographic orientation of MBE self-assembled NRs. In particular, the narrow and ordered step-terrace structure in the C3-plane-(4 5[combining macron] 1 38) plane-on a hexagonal pyramid favors the highest density, largest aspect ratio, and best uniformity of semipolar InGaN NRs, thus contributing to optimal photoluminescence performance. A thorough understanding of the mechanism of the effect of the Ga/In flux ratio and crystallographic plane on the MBE self-assembled growth behaviour of InGaN NRs was gained through experimental and theoretical exploration. This work contributes towards a deep understanding of the MBE self-assembled growth mechanism and controllable fabrication of dense, well-separated, and uniform InGaN NRs, thus contributing to the enhanced performance of NR-based optoelectronic devices.

Catalyst-free selective area growth of InN nanocolumns by MBE

Cost-effective Selective-Area Growth of GaN-based Nanocolumns on Silicon Substrates by Molecular-Beam Epitaxy

Catalyst Synthesis and Growth of Indium Nitride Nanodots

Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In

The Structural Evolution of InN Nanorods to Microstructures on Si (111) by Molecular Beam Epitaxy

Molecular Beam Epitaxy Growth of GaN, AlN and InN

In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxy

MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate

Well-Aligned Zno Nanocolumns Grown by Reactive Electron Beam Evaporation

Ingan Nanorings And Nanodots By Selective Area Epitaxy

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

Synthesis and Growth of InN with Pre-deposited Indium Nanodots Method on MOCVD at Low Temperature

InGaN Nanocolumn Growth Self-Induced by In-Situ Annealing and Ion Irradiation During Growth Process with Molecular Beam Epitaxy Method

Growth of Thick InN by Molecular Beam Epitaxy

Optimization of the structural and optical quality of InN nanowires on Si(111) by molecular beam epitaxy

Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks.

Selective Area Growth of InN Nanocolumns: Effect of Lattice Polarity

Growth Of Inn For Heterojunction Field Effect Transistor Applications By Plasma Enhanced Mbe

Insight into the Ga/In Flux Ratio and Crystallographic Plane Dependence of MBE Self-Assembled Growth of InGaN Nanorods on Patterned Sapphire Substrates

The Mechanism of Indium-Assisted Growth of (in)gan Nanorods: Eliminating Nanorod Coalescence by Indium-Enhanced Atomic Migration.