Abstract:The authors present an in situ study of the effect of nitrogen plasma pulse time on the temporal evolution of the surface morphology of InN growth on a-plane sapphire at 250 °C by plasma assisted atomic layer epitaxy (ALEp). The growth surface evolution was monitored in real-time using grazing incidence small angle x-ray scattering (GISAXS) measurements at an x-ray incidence angle of 0.8°. Nitrogen plasma pulse time (tp) was varied between 15 and 30 s in 5-s steps, and for all tp, the near specular scattering broadens and correlated peaks develop and evolve along the Yoneda Wing (YW). For tp ≥ 20 s, a YW with one correlated length scale evolves. At the end of the growth, the longest correlated length scale is 16.54 nm for tp = 25 s. Porod analysis of GISAXS intensity at high qy for tp = 25 s shows the formation of mounded shapes at the early stage of nucleation that transitioned to cylinders after about 3 unit cells of InN growth. Additionally, at tp = 25 s, the growth rate is highest with root mean square surface roughness and carbon impurity levels at or below atomic force microscopy and x-ray photoelectron spectroscopy sensitivity limits, respectively. At tp < 25 s, the growth surface may be undersaturated and at tp > 30 s, it appears that trimethylindium precursor molecules start to decompose, resulting in higher carbon content in the film. Thus, the nature of GISAXS correlated length scale directly correlates with the material quality. Additional ex situ characterizations reveal an electron mobility of 6–31 cm2/V s for a 3–5 nm thick InN film on a-plane sapphire, which is similar to the reported value of 30 cm2/V s for a 1300 nm thick InN film grown by molecular beam epitaxy directly on sapphire. Thus, the combination of in situ synchrotron x-ray analysis and ex situ characterization is a powerful approach to develop understanding of the growth mechanisms of ALEp of III-N materials in order to improve the quality by reducing impurities and broaden material applications.

Investigation of line-shaped CO2 laser annealing on InN/AlN/sapphire substrates

Thermal Annealing of InN Films Grown by Metal–organic Chemical Vapor Deposition

Effects of Sapphire Annealing on the Structural Properties of AIN Thin Films Grown by Molecular Beam Epitaxy

Characteristics of Annealing of InN Films

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

The Growth Temperatures Dependence of Optical and Electrical Properties of Inn Films

Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

Structural and surface analysis of AlInN thin films synthesized by elemental stacks annealing

Infrared Stimulated Emission with an Ultralow Threshold from Low-Dislocation-density InN Films Grown on a Vicinal GaN Substrate

The Structural Evolution of Semipolar (11−22) Plane AlN Tem-Plate on m-Plane Sapphire Prepared by Sputtering and High Temperature Annealing

Unintentionally Doped InN Grown Onto an Atomically Flat AlN Intermediate Layer Using Plasma‐assisted Molecular Beam Epitaxy

Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering

Influence of GaN Buffer Layer for InN Growth

Influence of Thermal Annealing on Properties of InGaN Films

Effect of Epitaxial Temperature on N-polar InN Films Grown by Molecular Beam Epitaxy

Synthesis and Growth of InN with Pre-deposited Indium Nanodots Method on MOCVD at Low Temperature

Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers

Effects of Indium Surfactant on the Crystalline and Optical Properties of GaN During Initial Growth Stage

Effects of High-Temperature Thermal Annealing on the Crystal Structure and Phase Separation in Sputtered ScAlN Thin Films

Temperature‐dependent Growth and Characterization of N‐polar InN Films by Molecular Beam Epitaxy