Abstract:Normally off AlGaN/GaN high electron mobility transistors with a p-type gate are promising for power switching applications, with advantages of low energy consumption and safe operation. In this work, p-NiO is employed as a gate stack, and the interfacial reconstruction and band structure modification at the p-NiO/AlGaN interface have been demonstrated to manipulate channel transport of AlGaN/GaN high electron mobility transistors by post-annealing. In addition to achieving a positive threshold voltage of 0.6 V and a large saturation output current of 520 mA/mm, we found that the gate leakage and On/Off drain current ratio can be improved significantly by more than 104 due to the p-NiO/AlGaN interfacial reconstruction. However, high annealing temperature also results in an increasing ON-resistance and a dramatically increased knee voltage (VK), which can be attributed to the formation of an ultra-thin γ-Al2O3 layer and the substitution of O on N site as a shallow donor at the p-NiO/AlGaN interface confirmed by experimental analyses. Theoretical calculations indicate that such interface reconstruction facilitates an additional potential well at the p-NiO/AlGaN interface to which electrons are spilled out from a two-dimensional electron gas channel under high forward gate voltage, resulting in the increased VK. Finally, an optimized annealing condition was confirmed that can eliminate this increased VK phenomenon and simultaneously remain these significantly improved device performances. These findings provide deep understanding of the performance manipulation of AlGaN high electron mobility transistors, which is very important for engineering the p-NiO/AlGaN interface toward high-performance and stable devices.

Improvements in Microstructure and Leakage Current of High-In-Content InGaN p-i-n Structure by Annealing

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Influence of Thermal Annealing on Properties of InGaN Films

Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Forming Gas Annealing

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

Structural Characterization of Indium-Rich Nanoprecipitate in InGaN V-pits Formed by Annealing

The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

NiO/AlGaN interface reconstruction and transport manipulation of p-NiO gated AlGaN/GaN HEMTs

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts

High‐Temperature Annealing of AlGaN

Influence of annealing on the surface structure evolution of intrinsic p-type HgCdTe films.

Effect of annealing on the surface characteristics of GaN-LED with AlGaN cladding after ICP dry etching

Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode.

Annealing effect on structures and luminescence of amorphous SiN films

The Effect of Postannealing on the Electrical Properties of Well-Aligned N-Zno Nanorods/p-Si Heterojunction

Optimization of Annealing Process for Improved InGaN Solar Cell Performance