Abstract:Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insight into the mechanism of carrier recombination and bandedge structure in semiconductors. In this study, mid-infrared PL measurements on vertically aligned InAs nanowires (NWs) are realized for the first time in a wide temperature range of up to 290 K, by which the radiative recombinations are clarified in the NWs grown on n- and p-type Si substrates, respectively. A dominant PL feature is identified to be from the type-II optical transition across the interfaces between the zinc-blend (ZB) and the wurtzite (WZ) InAs, a lower-energy feature at low temperatures is ascribed to impurity-related transition, and a higher energy feature at high temperatures originates in the interband transition of the WZ InAs being activated by thermal-induced electron transfer. The optical properties of the ZB-on-WZ and WZ-on-ZB interfaces are asymmetric, and stronger nonradiative recombination and weaker carrier-phonon interaction show up in the NWs on p-type substrate in which built-in electric field forms and leads to carrier assembling around the WZ-on-ZB interface. The results indicate that wide temperature-range infrared PL analysis can serve as efficient vehicle for clarifying optical properties and bandedge processes of the crystal-phase interfaces in vertically aligned InAs NWs.

In(AsN) Mid-Infrared Emission Enhanced by Rapid Thermal Annealing

Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE

InAs-based Dilute Nitride Materials and Devices for the Mid-Infrared Spectral Range

Effects of Substrate and N Content on the Growth of the Mid-Infrared Dilute Nitride InAsN Alloy

Growth and Characterization of InAsN/GaAs Dilute Nitride Semiconductor Alloys for the Midinfrared Spectral Range

Extended Wavelength Mid-Infrared Photoluminescence from Type-I InAsN and InGaAsN Dilute Nitride Quantum Wells Grown on InP

Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics

Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Photoluminescence of InAs<sub>0.926</sub>Sb<sub>0.063</sub>N<sub>0.011</sub>/InAs multi-quantum wells in the mid-infrared spectral range

Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

Photoluminescence Properties Of Midinfrared Dilute Nitride Inasn Epilayers With/Without Sb Flux During Molecular Beam Epitaxial Growth

Midinfrared Photoluminescence Up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of Inas Nanowires

Molecular Beam Epitaxial (MBE) Growth and Spectroscopy of Dilute Nitride InAsN:Sb for Mid-Infrared Applications

Luminescent Properties of Annealed and Directly Wafer-Bonded InAsP/InGaAsP Multiple Quantum Wells

Effect of Rapid Thermal Annealing on Behavior of Nitrogen in GaAsN Alloys

Study of Annealing Condition of InSbN Alloys Fabricated by Ion Implantation

In Situ Annealing Enhancement of the Optical Properties and Laser Device Performance of InAs Quantum Dots Grown on Si Substrates.

Thermal Annealing of InN Films Grown by Metal–organic Chemical Vapor Deposition

Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films