Abstract:The authors present an in situ study of the effect of nitrogen plasma pulse time on the temporal evolution of the surface morphology of InN growth on a-plane sapphire at 250 °C by plasma assisted atomic layer epitaxy (ALEp). The growth surface evolution was monitored in real-time using grazing incidence small angle x-ray scattering (GISAXS) measurements at an x-ray incidence angle of 0.8°. Nitrogen plasma pulse time (tp) was varied between 15 and 30 s in 5-s steps, and for all tp, the near specular scattering broadens and correlated peaks develop and evolve along the Yoneda Wing (YW). For tp ≥ 20 s, a YW with one correlated length scale evolves. At the end of the growth, the longest correlated length scale is 16.54 nm for tp = 25 s. Porod analysis of GISAXS intensity at high qy for tp = 25 s shows the formation of mounded shapes at the early stage of nucleation that transitioned to cylinders after about 3 unit cells of InN growth. Additionally, at tp = 25 s, the growth rate is highest with root mean square surface roughness and carbon impurity levels at or below atomic force microscopy and x-ray photoelectron spectroscopy sensitivity limits, respectively. At tp < 25 s, the growth surface may be undersaturated and at tp > 30 s, it appears that trimethylindium precursor molecules start to decompose, resulting in higher carbon content in the film. Thus, the nature of GISAXS correlated length scale directly correlates with the material quality. Additional ex situ characterizations reveal an electron mobility of 6–31 cm2/V s for a 3–5 nm thick InN film on a-plane sapphire, which is similar to the reported value of 30 cm2/V s for a 1300 nm thick InN film grown by molecular beam epitaxy directly on sapphire. Thus, the combination of in situ synchrotron x-ray analysis and ex situ characterization is a powerful approach to develop understanding of the growth mechanisms of ALEp of III-N materials in order to improve the quality by reducing impurities and broaden material applications.

Effects of Substrate and N Content on the Growth of the Mid-Infrared Dilute Nitride InAsN Alloy

Growth and Characterization of InAsN/GaAs Dilute Nitride Semiconductor Alloys for the Midinfrared Spectral Range

Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE

Molecular Beam Epitaxial (MBE) Growth and Spectroscopy of Dilute Nitride InAsN:Sb for Mid-Infrared Applications

Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

Photoluminescence Properties Of Midinfrared Dilute Nitride Inasn Epilayers With/Without Sb Flux During Molecular Beam Epitaxial Growth

In(AsN) Mid-Infrared Emission Enhanced by Rapid Thermal Annealing

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Room Temperature Photoluminescence at 4.5μm from InAsN

Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics

Extended Wavelength Mid-Infrared Photoluminescence from Type-I InAsN and InGaAsN Dilute Nitride Quantum Wells Grown on InP

Effect of Low Nitrogen Concentrations on the Electronic Properties of Inas1-Xnx

Photoluminescence of InAs<sub>0.926</sub>Sb<sub>0.063</sub>N<sub>0.011</sub>/InAs multi-quantum wells in the mid-infrared spectral range

Dilute nitride-based 1.3-μm high-performance lasers

Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique

A systematic study of spin-dependent recombination in GaAs$_{1-x}$N$_x$ as a function of nitrogen content

The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs

Improvement of III-V dilute nitride thin films for solar cell application: Effect of antimony doping

Effect of Al Substrate Nitridation on the Properties of AlN Films Grown by Pulsed Laser Deposition and Its Mechanism

Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering