Abstract:We analyse the optical properties of InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al$_{y}$In$_{1-y}$As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Al$_{y}$In$_{1-y}$As MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths $> 3$ $\mu$m. Photoluminescence (PL) measurements for QWs having Sb compositions up to $x = 10$\% demonstrate strong room temperature emission up to 3.4 $\mu$m, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission, using a theoretical model based on an 8-band $\vec{k} \cdot \vec{p}$ Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure. Our results highlight the potential of type-I InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of mid-infrared light-emitting diodes.

Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

InAs-based Dilute Nitride Materials and Devices for the Mid-Infrared Spectral Range

Photoluminescence of InAs<sub>0.926</sub>Sb<sub>0.063</sub>N<sub>0.011</sub>/InAs multi-quantum wells in the mid-infrared spectral range

Mid-infrared electroluminescence at room temperature from InAsSb multi- quantum-well light-emitting diodes

Room Temperature Midinfrared Electroluminescence from InSb/InAs Quantum Dot Light Emitting Diodes

Insb Based Quantum Dot Nanostructures for Mid-Infrared Photonic Devices

InSb Quantum Dot LEDs Grown by Molecular Beam Epitaxy for Mid-Infrared Applications

Extended Wavelength Mid-Infrared Photoluminescence from Type-I InAsN and InGaAsN Dilute Nitride Quantum Wells Grown on InP

Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes

Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE

Molecular Beam Epitaxial (MBE) Growth and Spectroscopy of Dilute Nitride InAsN:Sb for Mid-Infrared Applications

Growth and Characterization of InAsN/GaAs Dilute Nitride Semiconductor Alloys for the Midinfrared Spectral Range

Photoluminescence Properties Of Midinfrared Dilute Nitride Inasn Epilayers With/Without Sb Flux During Molecular Beam Epitaxial Growth

Optical properties of metamorphic type-I InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells grown on GaAs for the mid-infrared spectral range

Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

InSb Quantum Dots for the Mid-Infrared Spectral Range Grown on GaAs Substrates Using Metamorphic InAs Buffer Layers

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics

Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

Growth And Emission Tuning Of Inas/Inp Quantum Dots Superlattice

Gain and Tuning Characteristics of Mid-Infrared InSb Quantum Dot Diode Lasers