Abstract:In recent years, quasi-1D semiconductor nanowires have attracted significant research interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III–V compound semiconductor structure with a narrow band gap, shows high electron mobility and high absorption from the visible to the mid-wave infrared (MWIR), holding promise for room-temperature high-performance infrared photodetectors. Therefore, the material growth, device preparation and performance characteristics have attracted increasing attention, enabling high-sensitivity InAs nanowire photodetector from the visible to the MWIR at room temperature. This review starts by discussing the growth process of the low-dimensional structure and elementary properties of the material, such as the crystalline phase, mobility, morphology, surface states and metal contacts. Then, three solutions, including the visible-light-assisted infrared photodetection technology, vertical nanowire-array technology and band engineering by the growth of InAsSb nanowires with increasing Sb components, are elaborated to obtain longer cut-off wavelength MWIR photodetectors based on single InAs nanowire and its heterojunction structure. Finally, the potential and challenges of the state-of-the-art optoelectronic technologies for InAs nanowire MWIR photodetectors are summarized and compared, and preliminary suggestions for the technical development route and prospects are presented. This review mainly delineates the research progress of material growth, device fabrication and performance characterization of InAs nanowire MWIR photodetectors, providing a reference for the development of the next-generation high-performance photodetectors over a wide spectrum range.

Mid-infrared electroluminescence at room temperature from InAsSb multi- quantum-well light-emitting diodes

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Spatially-indirect Photo- and Electro-Luminescence in the 1.3 /spl Mu/m Range at Room Temperature

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Optically Pumped Mid-Infrared Light Emitter on Silicon

Optical properties of metamorphic type-I InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells grown on GaAs for the mid-infrared spectral range

Metamorphic InGaAs/InAsPSb Quantum Well Light Emitting Diodes for Operation in the Short‐Wave Infrared Region

White light-emitting quantum dot diodes and tuning of luminescence processes

Mid-Infrared Photoluminescence of Pbse/Pbsrse Multiple Quantum Wells Grown by Molecular Beam Epitaxy

Luminescent Properties of Annealed and Directly Wafer-Bonded InAsP/InGaAsP Multiple Quantum Wells

Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement

Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

InAs triangular quantum wells grown on InP/SiO2/Si heterogeneous substrate for mid-infrared emission

Room-temperature InAsSb pBin detectors for mid-infrared application

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

Deep-Ultraviolet Emission from an Ingaas Semiconductor Laser

Interfacial Characteristics and Optical Properties of InAs/InAsSb Type II Superlattices for the Mid‐Infrared Operation

Competitive Emissions of InAs (qds)/gainasp/inp Grown by GSMBE

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

8–13 Μm InAsSb Heterojunction Photodiode Operating at Near Room Temperature