Abstract:We report the on the characterisation of 1.3-mu m emitting GaInNAs quantum well (QW) lasers grown by molecular beam epitaxy using a plasma nitrogen source. Through the optimization of the structural and optical properties as a function of substrate temperature and nitrogen flux conditions, we show that high optical quality structures, which exhibit good room temperature photoluminescence intensity and photoluminescence linewidths < 10meV at low temperature, can be routinely achieved. To obtain 1.3-mu m emission, we employed a structure containing quantum wells with an indium content of 40% and a nitrogen content of 2.5% which have low nitrogen content (1%) lattice matched quaternary GaInNAs barriers, the latter enabling us to grow thick barrier structures without introducing further strain. For unmounted and uncoated 15 mu m ridge waveguide lasers we have achieved threshold current densities as low as 377Acm(-2) for a 3 QW and record low value of 178Acm(-2) for a single QW device emitting above 13 10nm. The devices show excellent temperature characteristics with characteristic temperatures > 90 degrees C observed in several structures. In comparison to GaInAs quantum well lasers, the results show that at this composition (2.5%) there is no appreciable degradation of performance due to the presence of nitrogen in these samples. Increasing the nitrogen content by 1% was observed to shift the wavelength to 13 90m, but with a threshold current density increased by a factor of 2 to 830Acm(-2). The results also indicate that although high quality GaInNAs lasers can be achieved at wavelengths suitable for the 1.31 mu m optical fibre waveband, the performance of devices with higher N content, and therefore with emission at longer wavelength, are degraded.

Growth and Characterization of InAsN/GaAs Dilute Nitride Semiconductor Alloys for the Midinfrared Spectral Range

Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE

Effects of Substrate and N Content on the Growth of the Mid-Infrared Dilute Nitride InAsN Alloy

Molecular Beam Epitaxial (MBE) Growth and Spectroscopy of Dilute Nitride InAsN:Sb for Mid-Infrared Applications

InAs-based Dilute Nitride Materials and Devices for the Mid-Infrared Spectral Range

Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics

Extended Wavelength Mid-Infrared Photoluminescence from Type-I InAsN and InGaAsN Dilute Nitride Quantum Wells Grown on InP

Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

Dilute nitride-based 1.3-μm high-performance lasers

In(AsN) Mid-Infrared Emission Enhanced by Rapid Thermal Annealing

Photoluminescence Properties Of Midinfrared Dilute Nitride Inasn Epilayers With/Without Sb Flux During Molecular Beam Epitaxial Growth

Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

Photoluminescence of InAs<sub>0.926</sub>Sb<sub>0.063</sub>N<sub>0.011</sub>/InAs multi-quantum wells in the mid-infrared spectral range

Growth and Characterization of GaAsN Bulk Layer and (in)gaasn Quantum-Well Structures

Room Temperature Photoluminescence at 4.5μm from InAsN

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

MBE Growth of Entire-Indium-composition-tunable InxGa1-xN Alloy

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique

Development of dilute nitride materials for mid-infrared diode lasers

First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES