Abstract:Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has been inhibited by the need for high temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature of 250 C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low losses for anneal-free nitride core and oxide cladding, enabling 1.77 dB/m loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported 270 C processes, and 8.66 dB/m loss and 4.03 million Q for 800 nm thick nitride. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity. And using a thick nitride micro-resonator, we demonstrate parametric gain and Optical Parametric Oscillation (OPO) with the lowest reported OPO threshold per unit resonator length for low temperature fabricated nitride, and supercontinuum generation over two octaves. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low temperature materials and processes.

Development of dilute nitride materials for mid-infrared diode lasers

InAs-based Dilute Nitride Materials and Devices for the Mid-Infrared Spectral Range

Dilute Bismide and Nitride Alloys for Mid-Ir Optoelectronic Devices

Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE

Growth and Characterization of InAsN/GaAs Dilute Nitride Semiconductor Alloys for the Midinfrared Spectral Range

III-Nitride Nanocrystal Laser Diodes and Integrated Photonics

Band engineering in dilute nitride and bismide semiconductor lasers

Effects of Substrate and N Content on the Growth of the Mid-Infrared Dilute Nitride InAsN Alloy

Molecular Beam Epitaxial (MBE) Growth and Spectroscopy of Dilute Nitride InAsN:Sb for Mid-Infrared Applications

In(AsN) Mid-Infrared Emission Enhanced by Rapid Thermal Annealing

Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Anneal-free ultra-low loss silicon nitride integrated photonics

Dilute nitride-based 1.3-μm high-performance lasers

Low-Dose Ion Implanted Active Waveguides in Nd3+ Doped Near-Stoichiometric Lithium Niobate: Promising Candidates for Near Infrared Integrated Laser

Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics

The influence of inhomogeneities and defects on novel quantum well and quantum dot based infrared-emitting semiconductor lasers

Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

Hybrid integrated laser at visible wavelengths using aluminum nitride photonic integrated circuit

Theory and design of In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 $μ$m on InP substrates

Nitrides: a promising class of nonlinear optical material candidates