III-Nitride Nanocrystal Laser Diodes and Integrated Photonics

Zetian Mi,Xianhe Liu,Yi Sun,David Laleyan,Mohammad Soltani

2019-01-01

Abstract:We demonstrate high performance III-nitride nanocrystal surface emitting laser diodes operating in the visible and UV spectra, as well as high Q microring resonators using single crystal aluminum nitride in the UV, visible and infrared.

What problem does this paper attempt to address?

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Dawei Di,Ivan Perez-Wurfl,Lingfeng Wu,Yidan Huang,Alessandro Marconi,Andrea Tengattini,Aleksei Anopchenko,Lorenzo Pavesi,Gavin Conibeer

DOI: https://doi.org/10.1063/1.3671671

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Silicon nanocrystals have shown attractive properties for photonic and photovoltaic applications. We demonstrate all-Si light-emitting diodes based on boron-doped Si nanocrystal/c-Si p-n heterojunction structure, which show electroluminescence in the visible/infrared regions. The electroluminescence spectra of these diodes can be modified by changing the quantum confining barriers from SiO2 to Si3N4. Our results are an important demonstration of electroluminescence from boron-doped Si nanocrystals—a wide band gap absorber material for third generation photovoltaics.
Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes Based on III-Nitride Semiconductors.

Bin Liu,Dunjun Chen,Hai Lu,Tao,Zhe Zhuang,Zhengguang Shao,Weizong Xu,Haixiong Ge,Ting Zhi,Fangfang Ren,Jiandong Ye,Zili Xie,Rong Zhang

DOI: https://doi.org/10.1002/adma.201904354

IF: 29.4

2019-01-01

Advanced Materials

Abstract:In the last two decades, remarkable progress has been achieved in the field of optoelectronic devices based on III-nitride semiconductors. In terms of photonics applications in the visible-UV spectral range, III-nitrides are one of the most promising materials. For instance, emerging gallium nitride (GaN)-based micro-light-emitting diode (LED) technology for high-resolution display, and UV photo-detection for environmental monitoring, health, and medical applications. In this work, hybrid micro/nano-LEDs with integration of II-VI quantum dots by means of lithography and nano-imprinting patterning techniques are demonstrated, and high-performance red/green/blue and white emissions are achieved. Consequently, plasmonic nanolasers are designed and fabricated using a metal-oxide-semiconductor structure, where strong surface plasmon polariton coupling leads to the efficient lasing with a low excitation threshold from the visible to UV tunable spectral range. Furthermore, performance-improved AlGaN UV solar-blind avalanche photodiodes (APDs) with a separate absorption and multiplication structure by polarization engineering are reported. These APDs deliver a record-high avalanche gain of up to 1.6 x 10(5). These newest advances in nano/micro-LEDs, nanolasers, and APDs can shed light on the emerging capabilities of III-nitride in cutting-edge applications.
Femtosecond Laser Direct Writing of High-Q Microresonators in Glass and Crystals

Jintian Lin,Yingxin Xu,Jiangxin Song,Jialei Tang,Zhiwei Fang,Min Wang,Wei Fang,Ya Cheng

DOI: https://doi.org/10.1117/12.2071737

2015-01-01

Abstract:We report on fabrication of microresonators of high quality (high-Q) factors in both glass and crystalline materials by femtosecond laser 3D micromachining. Based on this novel approach, we obtained high-Q microresonators of non-in-plane geometries in glass materials such as fused silica and Nd:glass and demonstrated lasing at a pump power as low as 69 microwatts. We also fabricated on-chip microresonators of sub-100 mu m diameters in crystalline materials including calcium fluoride and lithium niobate, and demonstrated efficient second harmonic generation using the high-Q lithium niobate microresonator. Furthermore, femtosecond laser 3D micromachining allows direct integration of the microresonators with other functional microcomponents, such as a microfluidic mixer and a microheater, leading to compact microdevices with enhanced functionalities. Our technique opens new avenues for fabricating high-Q microresonators with either 2D or 3D geometries on various types of dielectric materials.
Electron-Beam-Driven III-Nitride Plasmonic Nanolasers in the Deep-UV and Visible Region.

Tao Tao,Ting Zhi,Bin Liu,Peng Chen,Zili Xie,Hong Zhao,Fangfang Ren,Dunjun Chen,Youdou Zheng,Rong Zhang

DOI: https://doi.org/10.1002/smll.201906205

IF: 13.3

2020-01-01

Small

Abstract:Plasmonic nanolasers based on wide bandgap semiconductors are presently attracting immense research interests due to the breaking in light diffraction limit and subwavelength mode operation with fast dynamics. However, these plasmonic nanolasers have so far been mostly realized in the visible light ranges, or most are still under optical excitation pumping. In this work, III-nitride-based plasmonic nanolasers emitting from the green to the deep-ultraviolet (UV) region by energetic electron beam injection are reported, and a threshold as low as 8 kW cm(-2) is achieved. A fast decay time as short as 123 ps is collected, indicating a strong coupling between excitons and surface plasmon. Both the spatial and temporal coherences are observed, which provide a solid evidence for exciton-plasmon coupled polariton lasing. Consequently, the achievements in III-nitride-based plasmonic nanolaser devices represent a significant step toward practical applications for biological technology, computing systems, and on-chip optical communication.
Iii-Nitride Deep Ultraviolet Micro- and Nano-Photonics

Z. Y. Fan,J. Y. Lin,H. X. Jiang

DOI: https://doi.org/10.1117/12.641250

2006-01-01

Abstract:Recent progresses in epitaxial growth, fundamental studies of high Al content AlGaN alloys with Si and Mg doping, light polarization properties, and deep UV LEDs combined with microlens or photonic crystal structure to improve light extraction are presented. For Si doped Al0.7Ga0.3N, a room temperature n-type resistivity as low as 0.0075 Omega(.)cm has been obtained. We have also achieved n-AlN with a free electron concentration and mobility of about 1.0 x 10(17)cm(-3) and 2 cm(2)/VS, respectively. For Mg doped Al0.7Ga0.3N, we have obtained a resistivity around 10(5) Omega cm at room temperature and confirmed p-type conduction at elevated temperatures (> 700 K) with a resistivity of about 40 Omega cm at 800 K. Based on the optimized material growth, 280 nm deep UV LED with forward voltage of 6.7 V, and output power of 0.35 mW has been achieved at 20 mA. To enhance light extraction efficiency, sapphire microlens array was monolithically integrated on flip-chip bonded deep UV LED substrates; a light extraction enhancement of 55% was achieved. To improve the transverse light extraction, photonic crystal structures were incorporated into the devices, and significant light extraction enhancement was achieved.
Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

PJ McCann,IN Chao,H Sachar,D McAlister,CP Li,XM Fang,HZ Wu,K Namjou

DOI: https://doi.org/10.1016/s1386-1425(99)00071-2

IF: 4.831

1999-01-01

Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy

Abstract:This paper reviews results from research conducted at the University of Oklahoma on the development of new IV-VI semiconductor (lead salt) epitaxial growth and laser fabrication procedures that can ultimately lead to dramatic increases in mid-IR laser operating temperatures. Work has focused on growth of IV-VI semiconductor laser structures on silicon substrates using buffer layers that contain BaF2. Recent experiments show that it is possible to obtain high crystalline quality IV-VI semiconductor layer structures on (111)-oriented silicon substrates using molecular beam epitaxy (MBE) or on (100)-oriented silicon using a combination of MBE and liquid phase epitaxy (LPE). Experimental data for IV-VI semiconductor layer structures grown on silicon substrates including crystalline quality information as determined by high resolution X-ray diffraction (HRXRD) measurements and absorption edge information as determined by Fourier transform infrared (FTIR) transmission measurements are presented. Results show that these materials can be used to fabricate lasers that cover the 3 microns (3333 cm-1) to 16 microns (625 cm-1) spectral range. Removal of IV-VI semiconductor laser structures from the silicon growth substrate by dissolving BaF2 buffer layers with water is also demonstrated. This allows epitaxially-grown laser structures to be sandwiched between two heat sinks with a minimum of thermally resistive IV-VI semiconductor material. Theoretical modeling predicts that IV-VI lasers fabricated this way will have maximum continuous wave (cw) operating temperatures at least 60 degrees higher than those of IV-VI lasers fabricated on PbSe or PbTe substrates.
High-performance lasers for fully integrated silicon nitride photonics

Chao Xiang,Joel Guo,Warren Jin,Lue Wu,Jonathan Peters,Weiqiang Xie,Lin Chang,Boqiang Shen,Heming Wang,Qi-Fan Yang,David Kinghorn,Mario Paniccia,Kerry J. Vahala,Paul A. Morton,John E. Bowers

DOI: https://doi.org/10.1038/s41467-021-26804-9

IF: 16.6

2021-11-17

Nature Communications

Abstract:Abstract Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However, a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, non-optimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output power through the SiN waveguide and sub-kHz fundamental linewidth, addressing all the aforementioned issues. We also show Hertz-level fundamental linewidth lasers are achievable with the developed integration techniques. These lasers, together with high- Q SiN resonators, mark a milestone towards a fully integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications.

multidisciplinary sciences
Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature

Hyunseok Kim,Wook-Jae Lee,Alan C. Farrell,Pradeep Senanayake,Diana L. Huffaker

DOI: https://doi.org/10.1021/acs.nanolett.7b00384

2017-01-11

Abstract:Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact size, and the capability to grow directly on lattice-mismatched silicon substrates. Although there have been remarkable advances in nanowire-based emitters, their practical applications are still in the early stages due to the difficulties in integrating nanowire emitters with photonic integrated circuits (PICs). Here, we demonstrate for the first time optically pumped III-V nanowire array lasers monolithically integrated on silicon-on-insulator (SOI) platform. Selective-area growth of purely single-crystalline InGaAs/InGaP core/shell nanowires on an SOI substrate enables the nanowire array to form a photonic crystal nanobeam cavity with superior optical and structural properties, resulting in the laser to operate at room temperature. We also show that the nanowire array lasers are effectively coupled with SOI waveguides by employing nanoepitaxy on a pre-patterned SOI platform. These results represent a new platform for ultra-compact and energy-efficient optical links, and unambiguously point the way toward practical and functional nanowire lasers.

Mesoscale and Nanoscale Physics,Optics
Low Threshold GaN-Based Microdisk Lasers on Silicon with High Q Factor

Yang Mei,Minchao Xie,Hao Long,Leiying Ying,Baoping Zhang

DOI: https://doi.org/10.1109/jlt.2022.3147803

IF: 4.7

2022-01-01

Journal of Lightwave Technology

Abstract:III-nitride-based microdisk lasers on Si offer the potential in large-scale monolithic Si-based photonic integrated circuits. Here, we demonstrate a new approach to fabricating III-nitride microdisk lasers on Si, which can avoid the problem of low crystal quality and large thickness in traditional Si-based photonic devices. The III-nitride membrane was grown on a sapphire substrate and then transferred to Si to fabricate the microdisk lasers; and an airgap undercut structure was realized by simply wet etching of a SiO 2 sacrificial layer. Devices fabricated by this method are free from the defect-rich layers that are unavoidable when grown directly on Si, resulting in a high quality (Q) value of 12543 at 412.9 nm. Room temperature lasing was demonstrated with a threshold energy density as low as 33.6 μJ/cm 2 . The whispering gallery mode oscillation was clearly observed and the model behavior was systematically investigated.
Hybrid integrated laser at visible wavelengths using aluminum nitride photonic integrated circuit

Nikolay Videnov,Matthew L. Day,Michal Bajcsy

DOI: https://doi.org/10.1117/12.3000556

2024-08-13

Abstract:We show the first demonstration of a hybrid external cavity diode laser (ECDL) using aluminum nitride (AlN) as the wave-guiding material. Two devices are presented, a near-infrared (NIR) laser using a 850 nm diode and a red laser using a 650 nm diode. The NIR laser has $\approx$1 mW on chip power, 6 nm of spectral coverage, instantaneous linewidth of 720$\pm$80 kHz, and 12 dB side mode suppression ratio (SMSR). The red laser has 15 dB SMSR.

Optics,Applied Physics
Near ultraviolet photonic integrated lasers based on silicon nitride

Anat Siddharth,Thomas Wunderer,Grigory Lihachev,Andrey S. Voloshin,Camille Haller,Rui Ning Wang,Mark Teepe,Zhihong Yang,Junqiu Liu,Johann Riemensberger,Nicolas Grandjean,Noble Johnson,Tobias J. Kippenberg

DOI: https://doi.org/10.1063/5.0081660

2022-03-30

Abstract:Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic integrated resonators have allowed to outperform bulk external diode and fiber lasers in both phase noise and frequency agility in the 1550 nm-telecommunication window. Here, we demonstrate for the first time a hybrid integrated laser composed of a gallium nitride (GaN) based laser diode and a silicon nitride photonic chip-based microresonator operating at record low wavelengths as low as 410 nm in the near-ultraviolet wavelength region suitable for addressing atomic transitions of atoms and ions used in atomic clocks, quantum computing, or for underwater LiDAR. Using self-injection locking to a high Q (0.4 $\times$ 10$^6$) photonic integrated microresonator we observe a phase noise reduction of the Fabry-Pérot laser at 461 nm by a factor greater than 100$\times$, limited by the device quality factor and back-reflection.

Optics,Applied Physics
III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition

Matthew S. Wong,Emily S. Trageser,Haojun Zhang,Hsun-Ming Chang,Stephen Gee,Tanay Tak,Srinivas Gandrothula,Changmin Lee,James S. Speck,Shuji Nakamura,Daniel A. Cohen,Steven P. DenBaars

DOI: https://doi.org/10.1364/oe.520339

IF: 3.8

2024-05-21

Optics Express

Abstract:Matthew S. Wong, Emily S. Trageser, Haojun Zhang, Hsun-Ming Chang, Stephen Gee, Tanay Tak, Srinivas Gandrothula, Changmin Lee, James S. Speck, Shuji Nakamura, Daniel A. Cohen, Steven P. DenBaars A novel deep-ridge laser structure with atomic-layer deposition (ALD) sidewall passivation was proposed that enhances the optical ... [Opt. Express 32, 20483-20490 (2024)]

optics
Wafer-scale Vertical Injection III-nitride Deep-Ultraviolet Light Emitters

Jiaming Wang,Chen Ji,Jing Lang,Fujun Xu,Lisheng Zhang,Xiangning Kang,Zhixin Qin,Xuelin Yang,Ning Tang,Xinqiang Wang,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1038/s41467-024-53857-3

IF: 16.6

2024-01-01

Nature Communications

Abstract:A ground-breaking roadmap of III-nitride solid-state deep-ultraviolet light emitters is demonstrated to realize the wafer-scale fabrication of devices in vertical injection configuration, from 2 to 4 inches. The epitaxial device structure is stacked on a GaN template instead of conventionally adopted AlN, where the primary concern of the tensile strain for Al-rich AlGaN on GaN is addressed via an innovative decoupling strategy, making the device structure decoupled from the underlying GaN template. Moreover, the strategy provides a protection cushion against the stress mutation during the removal of substrates. As such, large-sized wafers can be obtained without surface cracks, even after the removal of the sapphire substrates by laser lift-off. Wafer-scale fabrication of 280 nm vertical injection deep-ultraviolet light-emitting diodes is eventually demonstrated, where a light output power of 65.2 mW is achieved at a current of 200 mA, largely thanks to the significant improvement of light extraction. This work will definitely speed up the application of III-nitride solid-state deep-ultraviolet light emitters featuring high performance and scalability.
Demonstration of Green and UV Wavelength High Q Aluminum Nitride on Sapphire Microring Resonators Integrated with Microheaters

Walter Shin,Yi Sun,Mohammad Soltani,Zetian Mi

DOI: https://doi.org/10.1063/5.0052163

IF: 4

2021-01-01

Applied Physics Letters

Abstract:We demonstrate a high Q aluminum nitride (AlN) on sapphire microring resonators at green (532nm) and ultraviolet (UV) (369.5nm), which are two important wavelengths for sensing and quantum information processing. The quality factors (Q) of these resonators are characterized using integrated microheaters and based on thermo-optic resonance sweeping around those wavelengths for which tunable lasers are typically less available. We measure a record of high intrinsic Q of 147000 with a propagation loss of 7.3dB/cm at 532nm wavelength, and an intrinsic Q of 25500 with a propagation loss of 60.4dB/cm at UV 369.5nm wavelength. We also investigate the thermal crosstalk between the adjacent resonators when temperature change is applied by the microheater of one of the resonators on the same chip. A large thermal crosstalk and resonance shift are observed on other microring resonators even at millimeter(s) distance away from a microheater. This study provides further insight on the functionalities and capabilities of this promising integrated photonic platform for the ultraviolet (UV) and visible range.
Advances in III-nitride-based Microresonator Optical Frequency Combs

Sun Changzheng,Zheng Yanzhen,Xiong Bing,Wang Lai,Hao Zhibiao,Wang Jian,Han Yanjun,Li Hongtao,Luo Yi

DOI: https://doi.org/10.3788/irla20220270

2022-01-01

Infrared and Laser Engineering

Abstract:Chip-scale optical frequency combs based on microresonators have great potentials in spectroscopy, microwave photonics, optical atomic clocks and coherent optical communications. The non-centrosymmetric wurtzite crystal structure of aluminum nitride (AlN) and gallium nitride (GaN) allows them to exhibit both second- and third-order nonlinear optical coefficients, together with wide transparency window and large refractive index contrast against sapphire substrate, making III-nitrides an attractive platform for nonlinear photonics. The basic properties of AlN and GaN microresonators as well as recent advances in III-nitride-based microresonator frequency combs are presented, including broadband frequency comb generation and optical parametric oscillation in AlN microresonators, and soliton microcomb generation in GaN microresonators.
III-nitride Nanostructures: Emerging Applications for Micro-LEDs, Ultraviolet Photonics, Quantum Optoelectronics, and Artificial Photosynthesis

Yuanpeng Wu,Xianhe Liu,Ayush Pandey,Peng Zhou,Wan Jae Dong,Píng Wang,Jung‐Wook Min,Parag B. Deotare,M. Kira,Emmanouil Kioupakis,Zetian Mi

DOI: https://doi.org/10.1016/j.pquantelec.2022.100401

2022-01-01

Abstract:In this review article, we discuss the molecular beam epitaxy and basic structural, electronic, optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including nanowires, monolayer heterostructures, and quantum dots. Their emerging applications in ultraviolet, visible and infrared photonics, quantum optoelectronics, and artificial photosynthesis that are relevant for next generation mobile display, virtual/augmented reality, quantum communication, and energy, water, and environment sustainability challenges are presented.
InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300 mm Si wafer

Z Ouyang,D Colucci,E M B Fahmy,A A Yimam,J Van Campernhout,B Kunert,D Van Thourhout

DOI: https://doi.org/10.1364/OL.531635

2024-08-15

Abstract:The monolithic growth of direct-bandgap III-V materials directly on a Si substrate is a promising approach for the fabrication of complex silicon photonic integrated circuits including light sources and amplifiers. It remains challenging to realize practical, reliable, and efficient light emitters due to misfit defect formation during the epitaxial growth. Exploiting nano-ridge engineering (NRE), III-V nano-ridges with high crystal quality were achieved based on aspect ratio defect trapping inside narrow trenches. In an earlier work, we used an etched grating to create distributed feedback lasers from these nano-ridges. Here we deposited an amorphous silicon grating on the top of the nano-ridge. Under pulsed optical pumping, a ∼7.84 kW/cm2 lasing threshold was observed, ∼5 times smaller compared to devices with an etched grating inside the nano-ridge. Compared to the etched grating, the amorphous silicon grating introduces no extra carrier loss channels through surface state defects, which is believed to be the origin of the lower threshold. This low threshold again demonstrates the high quality of the epitaxial deposited material and may provide a route toward further optimizing the electrically driven devices.
Integrated Continuous-Wave Aluminum Nitride Raman Laser

Xianwen Liu,Changzheng Sun,Bing Xiong,Lai Wang,Jian Wang,Yanjun Han,Zhibiao Hao,Hongtao Li,Yi Luo,Jianchang Yan,Tongbo Wei,Yun Zhang,Junxi Wang

DOI: https://doi.org/10.1364/optica.4.000893

IF: 10.4

2017-01-01

Optica

Abstract:Wurtzite aluminum nitride (AlN) is known to exhibit six Raman-active optic phonons, making it appealing for Raman lasing. Here, we demonstrate continuous-wave Raman lasers with a low threshold and a high slope efficiency in high quality factor AlN-on-sapphire microrings. Stokes radiations around 1.7-1.8 mu m and cascaded operation into 1.9-2.0 mu m are identified with a telecom pump. Two types of Stokes lights with distinct Raman shifts and polarizations are recorded via selective excitation of corresponding optic phonons, in accordance with the Raman selection rules in AlN. The observed lasing behavior is satisfactorily accounted for by a theoretical analysis. Our results indicate that AlN-on-sapphire should be promising for integrated nonlinear optics. (C) 2017 Optical Society of America
Aluminum Nitride-on-sapphire Platform for Integrated High-Q Microresonators

Xianwen Liu,Changzheng Sun,Bing Xiong,Lai Wang,Jian Wang,Yanjun Han,Zhibiao Hao,Hongtao Li,Yi Luo,Jianchang Yan,Tongbo Wei,Yun Zhang,Junxi Wang

DOI: https://doi.org/10.1364/oe.25.000587

IF: 3.8

2017-01-01

Optics Express

Abstract:We demonstrate aluminum nitride (AlN) on sapphire as a novel platform for integrated optics. High-confinement AlN microring resonators are realized by adopting a partially etched (pedestal) waveguide to relax the required etching selectivity for exact pattern transfer. A wide taper is employed at the chip end facets to ensure a low fiber-to-chip coupling loss of ~2.8 dB/facet for both transverse-electric (TE) and transverse-magnetic (TM) modes. Furthermore, the intrinsic quality factors (Qint) recorded with a high-resolution linewidth measurement are up to ~2.5 and 1.9 million at telecom band for fundamental TE00 and TM00 modes, corresponding to a low intracavity propagation loss of ~0.14 and 0.2 dB/cm as well as high resonant buildup of 473 and 327, respectively. Such high-Q AlN-on-sapphire microresonators are believed to be very promising for on-chip nonlinear optics.
Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Taojie Zhou,Mingchu Tang,Guohong Xiang,Boyuan Xiang,Suikong Hark,Mickael Martin,Thierry Baron,Shujie Pan,Jae-Seong Park,Zizhuo Liu,Siming Chen,Zhaoyu Zhang,Huiyun Liu

DOI: https://doi.org/10.1038/s41467-020-14736-9

IF: 16.6

2020-02-20

Nature Communications

Abstract:Abstract Semiconductor III–V photonic crystal (PC) laser is regarded as a promising ultra-compact light source with unique advantages of ultralow energy consumption and small footprint for the next generation of Si-based on-chip optical interconnects. However, the significant material dissimilarities between III-V materials and Si are the fundamental roadblock for conventional monolithic III-V-on-silicon integration technology. Here, we demonstrate ultrasmall III-V PC membrane lasers monolithically grown on CMOS-compatible on-axis Si (001) substrates by using III-V quantum dots. The optically pumped InAs/GaAs quantum-dot PC lasers exhibit single-mode operation with an ultra-low threshold of ~0.6 μW and a large spontaneous emission coupling efficiency up to 18% under continuous-wave condition at room temperature. This work establishes a new route to form the basis of future monolithic light sources for high-density optical interconnects in future large-scale silicon electronic and photonic integrated circuits.

multidisciplinary sciences

III-Nitride Nanocrystal Laser Diodes and Integrated Photonics

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes Based on III-Nitride Semiconductors.

Femtosecond Laser Direct Writing of High-Q Microresonators in Glass and Crystals

Electron-Beam-Driven III-Nitride Plasmonic Nanolasers in the Deep-UV and Visible Region.

Iii-Nitride Deep Ultraviolet Micro- and Nano-Photonics

Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

High-performance lasers for fully integrated silicon nitride photonics

Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature

Low Threshold GaN-Based Microdisk Lasers on Silicon with High Q Factor

Hybrid integrated laser at visible wavelengths using aluminum nitride photonic integrated circuit

Near ultraviolet photonic integrated lasers based on silicon nitride

III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition

Wafer-scale Vertical Injection III-nitride Deep-Ultraviolet Light Emitters

Demonstration of Green and UV Wavelength High Q Aluminum Nitride on Sapphire Microring Resonators Integrated with Microheaters

Advances in III-nitride-based Microresonator Optical Frequency Combs

III-nitride Nanostructures: Emerging Applications for Micro-LEDs, Ultraviolet Photonics, Quantum Optoelectronics, and Artificial Photosynthesis

InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300 mm Si wafer

Integrated Continuous-Wave Aluminum Nitride Raman Laser

Aluminum Nitride-on-sapphire Platform for Integrated High-Q Microresonators

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)