Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Low Threshold GaN-Based Microdisk Lasers on Silicon with High Q Factor

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Low-threshold Whispering-Gallery-mode Microlasers Fabricated in a Nd:glass Substrate by Three-Dimensional Femtosecond Laser Micromachining.

Low-threshold Green Lasing in Heterogeneously Integrated InGaN-based Micro-rings Covered by Distributed Bragg Reflectors on Si (100)

Fabrication of Optical Cavities with Femtosecond Laser Pulses

Electrically injected GaN-based microdisk towards an efficient whispering gallery mode laser

Tunable Quantum Dot Lasers Grown Directly on Silicon

Continuous-wave Electrically Injected GaN-on-Si Microdisk Laser Diodes

Continuous-Wave Current Injected InGaN/GaN Microdisk Laser on Si(100)

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Thermal Characterization of Electrically Injected GaN-based Microdisk Lasers on Si

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

III-nitride semiconductor lasers grown on Si

InGaN-Based Lasers with an Inverted Ridge Waveguide Heterogeneously Integrated on Si(100)

E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

Electrically‐Driven Photonic Crystal Lasers with Ultra‐low Threshold

GaN Microdisks with a Single Porous Optical Confinement Layer for Whispering Gallery Mode Lasing

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300 mm Si wafer

Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities

High Speed Evanescent Quantum‐Dot Lasers on Si