Abstract:The achievement of electrically-pumped laser diodes at the micro/nanoscale levels is anticipated to feature an indispensable role in future photonic integrated circuits. However, the conventional p–n junction device architectures are inefficient due to serious optical and electrical losses. Herein, an electrically-injected whispering-gallery-mode (WGM) microlaser diode, which contained an n-AlGaN electron-injection layer, a ZnO microwire doped with a Ga impurity (ZnO:Ga MW), a Pt nanolayer, a MgO nanolayer and a p-GaN substrate as a hole supplier, was fabricated and systematically investigated. In practice, upon continuous-wave operation of electrical pumping at ambient temperature, the well-designed n-AlGaN/n-ZnO:Ga MW/Pt/MgO/p-GaN device exhibits remarkable double-heterojunction (n–n–p) characteristics, enabling lasing in the ultraviolet spectral region, accompanied by efficient suppression of spontaneous radiation. Furthermore, the device exhibits fascinating properties, with a threshold as low as 12.5 mA and a high quality ( Q )-factor of approximately 1943. The carefully-designed double heterostructure enables superinjection of current, as well as efficient confinement of injected carriers and photons. In this case, the electron–hole recombination, light-emission/lasing region, and population-inversion zones coincide, and are mainly concentrated in the ZnO:Ga MW active region, thereby achieving the required population inversion at relatively low current-injection levels. Such a methodical design and construction of a double-heterojunction microlaser device could bring new technological opportunities to realize high-performance lasers with a low threshold, high Q -factor, distinct multiple modes, and efficient suppression of spontaneous radiation driven by electrical current.

GaN Microdisks with a Single Porous Optical Confinement Layer for Whispering Gallery Mode Lasing

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Electrically injected GaN-based microdisk towards an efficient whispering gallery mode laser

Low-threshold Whispering-Gallery-mode Microlasers Fabricated in a Nd:glass Substrate by Three-Dimensional Femtosecond Laser Micromachining.

Single-mode Nanolasers Based on FP-WGM Hybrid Cavity Coupling.

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Whispering-gallery Mode Hexagonal Micro-/Nanocavity Lasers [Invited]

Low-threshold Green Lasing in Heterogeneously Integrated InGaN-based Micro-rings Covered by Distributed Bragg Reflectors on Si (100)

The Study on the Lasing Modes Modulated by the Dislocation Distribution in the GaN-Based Microrod Cavities

Low Threshold GaN-Based Microdisk Lasers on Silicon with High Q Factor

Controlled Self-Assembly of Organic Composite Microdisks for Efficient Output Coupling of Whispering-Gallery-Mode Lasers

An electrically-pumped WGM microlaser realized in an n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double-heterojunction device

Electrically-pumped WGM microlaser realized in n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double heterojunction device

Whispering‐gallery Microcavities with Unidirectional Laser Emission

Adjustable Enhanced Photoluminescence in Whispering-Gallery-mode Microdisk Arrays

Study Of Whispering-Gallery Mode Of Ingap Microdisks By Using Scanning Near-Field Optical Microscopy

High-efficiency photon-electron coupling resonant emission in GaN-based microdisks on Si

Ultralow‐Threshold and High‐Quality Whispering‐Gallery‐Mode Lasing from Colloidal Core/Hybrid‐Shell Quantum Wells

Floating GaN Whispering Gallery Mode Micro-Ring Lasing with Burstein–Moss Effect

Optical Properties and Resonant Modes in GaN/AlGaN and InGaN/GaN Multiple Quantum Well Microdisk Cavities

Photoluminescence Properties of Gan/AlGaN Multiple Quantum Well Microdisks