Abstract:Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest intensity mode as a function of pump power to better understand the dominant radiative processes. The variations of threshold power and lasing wavelength as a function of gain medium help us identify the possible limitations to lower-threshold lasing with quantum dot active medium. In addition, we have identified a distinctive lasing signature for quantum dot materials, which consistently lase at wavelengths shorter than the peak of the room temperature gain emission. These findings not only provide better understanding of lasing in nitride-based quantum dot cavity systems, but also shed insight into the more fundamental issues of light matter coupling in such systems.

Optical Properties and Resonant Modes in GaN/AlGaN and InGaN/GaN Multiple Quantum Well Microdisk Cavities

Optical Modes Within III-nitride Multiple Quantum Well Microdisk Cavities

Photoluminescence Properties of Gan/AlGaN Multiple Quantum Well Microdisks

Optical Resonant Modes in Ingan Mqw/Gan Micro-Cone

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

Optical Properties of Ingan Multiple Quantum Well Microdisks

Properties Of Optical Resonant Modes In Iii-Nitride Semiconductor Micro-Cone Cavities

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Realization of Regular Resonance Mode in GaN-based Polygonal Microdisks on Si

High-efficiency photon-electron coupling resonant emission in GaN-based microdisks on Si

The Study on the Lasing Modes Modulated by the Dislocation Distribution in the GaN-Based Microrod Cavities

Mode Study Of The Light Emission Distribution In Semiconductor Microdisks By Using Near-Field Optical Microscopy

Whispering-gallery Mode Hexagonal Micro-/Nanocavity Lasers [Invited]

Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities

GaN Microdisks with a Single Porous Optical Confinement Layer for Whispering Gallery Mode Lasing

The Ingaalp Quantum Well Microcavities Of Circular Or Deformed Disks And Disks With Microstructures

Approach to Single-Mode Dominated Resonant Emission in GaN-Based Square Microdisks on Si

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

Optical-disk-mode Pattern of InGaP Microdisks Emitting at 0.65 Μm

Comparison Of Optical Transitions In Ingan Quantum Well Structures And Microdisks

Electrically injected GaN-based microdisk towards an efficient whispering gallery mode laser