Abstract:Quantum-well intermixing (QWI) technology is commonly considered as an effective methodology to tune the post-growth bandgap energy of semiconductor composites for electronic applications in diode lasers and photonic integrated devices. However, the specific influencing mechanism of the interfacial strain introduced by the dielectric-layer-modulated multiple quantum well (MQW) structures on the photoluminescence (PL) property and interfacial quality still remains unclear. Therefore, in the present study, different thicknesses of SiO2-layer samples were coated and then annealed under high temperature to introduce interfacial strain and enhance atomic interdiffusion at the barrier–well interfaces. Based on the optical and microstructural experimental test results, it was found that the SiO2 capping thickness played a positive role in driving the blueshift of the PL peak, leading to a widely tunable PL emission for post-growth MQWs. After annealing, the blueshift in the InGaAs/AlGaAs MQW structures was found to increase with increased thickness of the SiO2 layer, and the largest blueshift of 30 eV was obtained in the sample covered with a 600 nm thick SiO2 layer that was annealed at 850 °C for 180 s. Additionally, significant well-width fluctuations were observed at the MQW interface after intermixing, due to the interfacial strain introduced by the thermal mismatch between SiO2 and GaAs, which enhanced the inhomogeneous diffusion rate of interfacial atoms. Thus, it can be demonstrated that the introduction of appropriate interfacial strain in the QWI process is of great significance for the regulation of MQW band structure as well as the control of interfacial quality.

Optical Properties of Ingan Multiple Quantum Well Microdisks

Comparison Of Optical Transitions In Ingan Quantum Well Structures And Microdisks

Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks

The Ingaalp Quantum Well Microcavities Of Circular Or Deformed Disks And Disks With Microstructures

Photoluminescence Properties of Gan/AlGaN Multiple Quantum Well Microdisks

Optical Properties and Resonant Modes in GaN/AlGaN and InGaN/GaN Multiple Quantum Well Microdisk Cavities

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Study Of Whispering-Gallery Mode Of Ingap Microdisks By Using Scanning Near-Field Optical Microscopy

Optical-disk-mode Pattern of InGaP Microdisks Emitting at 0.65 Μm

Optical Modes Within III-nitride Multiple Quantum Well Microdisk Cavities

Mode Study Of The Light Emission Distribution In Semiconductor Microdisks By Using Near-Field Optical Microscopy

An Array Of Sige Nanodisks With Ge Quantum Dots On Bulk Si Substrates Demonstrating A Unique Light-Matter Interaction Associated With Dual Coupling

Optical Resonant Modes in Ingan Mqw/Gan Micro-Cone

Adjustable Enhanced Photoluminescence in Whispering-Gallery-mode Microdisk Arrays

Photonic integrated circuits fabricated using quantum well intermixing

GaN Microdisks with a Single Porous Optical Confinement Layer for Whispering Gallery Mode Lasing

High-efficiency photon-electron coupling resonant emission in GaN-based microdisks on Si

Bandgap Engineering Of Ingaasp/Inp Multiple Quantum Well Structure By Dielectric Sputtering

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Carrier Dynamics Of Inxga1-Xn Quantum Disks Embedded In Gan Nanocolumns