Abstract:Quantum-well intermixing (QWI) technology is commonly considered as an effective methodology to tune the post-growth bandgap energy of semiconductor composites for electronic applications in diode lasers and photonic integrated devices. However, the specific influencing mechanism of the interfacial strain introduced by the dielectric-layer-modulated multiple quantum well (MQW) structures on the photoluminescence (PL) property and interfacial quality still remains unclear. Therefore, in the present study, different thicknesses of SiO2-layer samples were coated and then annealed under high temperature to introduce interfacial strain and enhance atomic interdiffusion at the barrier–well interfaces. Based on the optical and microstructural experimental test results, it was found that the SiO2 capping thickness played a positive role in driving the blueshift of the PL peak, leading to a widely tunable PL emission for post-growth MQWs. After annealing, the blueshift in the InGaAs/AlGaAs MQW structures was found to increase with increased thickness of the SiO2 layer, and the largest blueshift of 30 eV was obtained in the sample covered with a 600 nm thick SiO2 layer that was annealed at 850 °C for 180 s. Additionally, significant well-width fluctuations were observed at the MQW interface after intermixing, due to the interfacial strain introduced by the thermal mismatch between SiO2 and GaAs, which enhanced the inhomogeneous diffusion rate of interfacial atoms. Thus, it can be demonstrated that the introduction of appropriate interfacial strain in the QWI process is of great significance for the regulation of MQW band structure as well as the control of interfacial quality.

Comparison Of Optical Transitions In Ingan Quantum Well Structures And Microdisks

Optical Properties of Ingan Multiple Quantum Well Microdisks

Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

The Ingaalp Quantum Well Microcavities Of Circular Or Deformed Disks And Disks With Microstructures

Photoluminescence Properties of Gan/AlGaN Multiple Quantum Well Microdisks

Optical Transitions In Ganas/Gaas Single Quantum Well

Fabrication And Properties Of Coherent-Structure In-Polarity Inn/In0.7ga0.3n Multiquantum Wells Emitting At Around 1.55 Mu M

Optical Transitions Inpbte∕cdtequantum Dots

Optical Pumping Of Iv-Vi Semiconductor Multiple Quantum Well Materials Using A Gasb-Based Laser With Emission At Lambda=2.5 Mu M

Optical Properties and Resonant Modes in GaN/AlGaN and InGaN/GaN Multiple Quantum Well Microdisk Cavities

A Comparison of Photoluminescence Properties of InGaAs/GaAs Quantum Dots with a Single Quantum Well

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

Enhancement Of Electron-Longitudinal Optical Phonon Coupling In Highly Strained Ingan/Gan Quantum Well Structures

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Optical-disk-mode Pattern of InGaP Microdisks Emitting at 0.65 Μm

Comparison Of Photocurrent Spectra Of Ingaasn Qd And Ingaas Qw Laser Devices