Optical Pumping Of Iv-Vi Semiconductor Multiple Quantum Well Materials Using A Gasb-Based Laser With Emission At Lambda=2.5 Mu M

Patrick J. McCann,Pratyuma C. Kamat,Yunli Li,A. Sow,Huizhen Wu,Gregory L. Belenky,Leon M. Shterengas,Janet Kim,Ramon Ubaldo Martinelli
DOI: https://doi.org/10.1063/1.1851601
IF: 2.877
2005-01-01
Journal of Applied Physics
Abstract:Room-temperature photoluminescence (PL) measurements of IV-VI semiconductor multiple quantum well (MQW) structures using diode laser optical pumping at two different excitation wavelengths, 2.5 and 0.91 mu m, are described. Active region temperatures during continuous-wave optical pumping were determined from blueshifts in PL emission energies. Temperatures were between 22.7 and 29.5 degrees C lower for 2.5-mu m pumping as compared to 0.91-mu m pumping at the same power level of 100 mW. Heating effects are also shown to be smaller for MQW samples with more narrow PbSe wells. (C) 2005 American Institute of Physics.
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