Abstract:A quantum well based semiconductor optical amplifier (SOA) compatible with a butt-joint active passive integration scheme at 1300 nm is tested in a monolithic passively mode locked laser operating at 1300 nm. The different laser dynamics are investigated in detail and the gain and absorption parametrization of the SOA as used in a laser simulator is described. Simulation outcomes are compared with the characterization results of a passively mode-locked two-section laser that was realized using a fully active quantum well layer stack. The different laser dynamic regimes are identified by recording light intensity characteristics for a range of operating conditions with 50 GHz bandwidth in real time as well as the high frequency electrical spectra from a photodetector. Passive mode-locking has been achieved with a 20.4 GHz repletion rate with a 0.32% detuning of repetition rate by increasing the current, where a 0.25% detuning was predicted by the parametrized model. The stepped heterodyne technique has been used to measure the output pulse duration. A FWHM of 1.0 ps has been recorded after propagating for 110 m in standard single mode fiber. The phase spectrum with a maximum of 2.5 radians variation within the 6 nm frequency comb has been obtained. This value agrees with the simulation output, which models the amplification and the absorption out of this two-section laser. Q-switched mode-locking behavior is observed from the time traces. The measurements of the q-switching dynamics reveal a stepped behavior in the relaxation oscillations as function of current injected into the semiconductor optical amplifier, with the presence of an exotic dynamical system with different periodicities at the transition currents, that cannot be predicted by the model. The fit of the relaxation oscillation with the Q-switching self-pulsation frequencies, reveals a differential gain that is in-line with the parameter used in the simulations.

Spectroscopic characterization of 1450 nm semiconductor pump laser structures for Raman amplifiers

Optically Pumped Mid-Infrared Light Emitter on Silicon

Optical Pumping Of Iv-Vi Semiconductor Multiple Quantum Well Materials Using A Gasb-Based Laser With Emission At Lambda=2.5 Mu M

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Investigations of a coherently driven semiconductor optical cavity QED system

Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

980 Nm 14-Pin Butterfly Module Dual-Channel Cw Qw Semiconductor Laser for Pumping

Characterization of a high-power tapered semiconductor amplifier system

301 W Narrow-Linewidth In-Band Pumped Er:Yb Co-Doped Fiber Amplifier at 1585 Nm and Related Modeling for Dynamics Study and Optimization

Material Properties and Performance of ErAs:In(Al)GaAs Photoconductors for 1550 Nm Laser Operation

Erbium-doped Fiber Amplifier for Pump Wavelengths Between 780 and 840 Nm

Pump Laser Automatic Signal Control for Erbium-Doped Fiber Amplifier Gain, Noise Figure, and Output Spectral Power

Theoretical and Experimental Investigations on Erbium-Doped Fiber Amplifiers

Design and Fabrication of A Waveguiding Organic Double Hetero-Structure Light Emitting Device - A Milestone in the Development of an Electrically Pumped Polymer Laser

Spectral compression and group delay of optical pulses in silicon Raman amplifiers

Numerical Investigation into the Output Performance of a Silicon Raman Laser Based on a Silicon-on-insulator Waveguide Pumped by 2 Μm Lasers

Two-section passively Mode-locked laser as a test for amplification and absorption parameters of a quantum well based InP optical amplifier at 1300 nm

Erbium Silicate Compound Optical Waveguide Amplifier and Laser [Invited]

Nanosecond pulse pumped, fiber-integrated narrow linewidth linearly polarized Raman amplifier at 1120 nm

High Gain, Low Noise, Spectral-Gain-Controlled, Broadband Lumped Fiber Raman Amplifier