Abstract:The achievement of electrically-pumped laser diodes at the micro/nanoscale levels is anticipated to feature an indispensable role in future photonic integrated circuits. However, the conventional p–n junction device architectures are inefficient due to serious optical and electrical losses. Herein, an electrically-injected whispering-gallery-mode (WGM) microlaser diode, which contained an n-AlGaN electron-injection layer, a ZnO microwire doped with a Ga impurity (ZnO:Ga MW), a Pt nanolayer, a MgO nanolayer and a p-GaN substrate as a hole supplier, was fabricated and systematically investigated. In practice, upon continuous-wave operation of electrical pumping at ambient temperature, the well-designed n-AlGaN/n-ZnO:Ga MW/Pt/MgO/p-GaN device exhibits remarkable double-heterojunction (n–n–p) characteristics, enabling lasing in the ultraviolet spectral region, accompanied by efficient suppression of spontaneous radiation. Furthermore, the device exhibits fascinating properties, with a threshold as low as 12.5 mA and a high quality ( Q )-factor of approximately 1943. The carefully-designed double heterostructure enables superinjection of current, as well as efficient confinement of injected carriers and photons. In this case, the electron–hole recombination, light-emission/lasing region, and population-inversion zones coincide, and are mainly concentrated in the ZnO:Ga MW active region, thereby achieving the required population inversion at relatively low current-injection levels. Such a methodical design and construction of a double-heterojunction microlaser device could bring new technological opportunities to realize high-performance lasers with a low threshold, high Q -factor, distinct multiple modes, and efficient suppression of spontaneous radiation driven by electrical current.

Floating GaN Whispering Gallery Mode Micro-Ring Lasing with Burstein–Moss Effect

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Whispering-Gallery Mode Lasing in a Floating GaN Microdisk with a Vertical Slit

Low-threshold Whispering-Gallery-mode Microlasers Fabricated in a Nd:glass Substrate by Three-Dimensional Femtosecond Laser Micromachining.

Single-mode Nanolasers Based on FP-WGM Hybrid Cavity Coupling.

Theoretical Modelling of Single-Mode Lasing in Microcavity Lasers Via Optical Interference Injection.

Whispering-gallery Mode Hexagonal Micro-/Nanocavity Lasers [Invited]

GaN Microdisks with a Single Porous Optical Confinement Layer for Whispering Gallery Mode Lasing

Whispering Gallery Mode Lasing from InGaN/GaN Quantum Well Microtube

Electrically injected GaN-based microdisk towards an efficient whispering gallery mode laser

Double-triangular whispering-gallery mode lasing from a hexagonal GaN microdisk grown on graphene

Electrically driven optical resonance of spherical ZnO whispering gallery mode microcavity

Stimulated whispering gallery modes emission from green to UVA realized by AlInGaN based quantum wells microtube

Low-threshold Green Lasing in Heterogeneously Integrated InGaN-based Micro-rings Covered by Distributed Bragg Reflectors on Si (100)

Unidirectional Emission of GaN-based Eccentric Microring Laser with Low Threshold

Electrically-pumped WGM microlaser realized in n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double heterojunction device

An electrically-pumped WGM microlaser realized in an n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double-heterojunction device

Optical Resonant Modes in Ingan Mqw/Gan Micro-Cone

Realization of Directional Single-Mode Lasing by a GaN-based Warped Microring

The Study on the Lasing Modes Modulated by the Dislocation Distribution in the GaN-Based Microrod Cavities

Single Whispering Gallery Mode in Mesh-Structured Tubular Microcavity with Tunable Axial Confinement