Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Continuous-Wave Current Injected InGaN/GaN Microdisk Laser on Si(100)

Continuous-wave Electrically Injected GaN-on-Si Microdisk Laser Diodes

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Room-temperature Electrically Pumped InGaN-based Microdisk Laser Grown on Si

Thermal Characterization of Electrically Injected GaN-based Microdisk Lasers on Si

InGaN-Based Lasers with an Inverted Ridge Waveguide Heterogeneously Integrated on Si(100)

Unidirectional emission of GaN-on-Si microring laser and its on-chip integration

Low Threshold GaN-Based Microdisk Lasers on Silicon with High Q Factor

Low-threshold Green Lasing in Heterogeneously Integrated InGaN-based Micro-rings Covered by Distributed Bragg Reflectors on Si (100)

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si

Electrically Pumped Continuous‐wave 1.3‐µm InAs/GaAs Quantum Dot Lasers Monolithically Grown on Si Substrates

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Heat-sink Free CW Operation of Injection Microdisk Lasers Grown on Si Substrate with Emission Wavelength Beyond 13 Μm

Tunable Quantum Dot Lasers Grown Directly on Silicon

Ultra-low threshold green InGaN quantum dot microdisk lasers grown on silicon

On-Chip Integrated Quantum-Dot Silicon-Nitride Microdisk Lasers

Electrically injected GaN-based microdisk towards an efficient whispering gallery mode laser