Abstract:Gallium nitride (GaN), aluminum nitride, indium nitride (InN), and their alloys have long been considered as promising materials for device applications. Recently, growth of high quality InN as well as InxGa1−xN have been demonstrated. In particular, progress in the manufacturing of very high quality, single-crystal InN thin films has opened up a new challenging research avenue in the Ill-nitride semiconductors. In contrast to earlier beliefs, it has recently been found that InN has a relatively narrow bandgap, only ∼0.8 eV. Consequently, it is expected that InN has the smallest effective mass of the III-N semiconductors. As a result, very high electron mobility and a very large saturation velocity are expected. Recent single-particle Raman scattering, supported by ensemble Monte Carlo simulations suggest that steady velocities of the order of 5 × 107 cm/s can be found in high quality, single crystal wurtzite films of InN [1]. Here, we report on these calculations for the transport and properties of the non-equilibrium longitudinal optical phonons. We use a high quality, single-crystal wurtzite InN film grown on GaN and study the transport with picosecond/subpicosecond Raman spectroscopy. The built-in polarization and piezoelectric stress lead to an electric field of ∼80 kV/cm in the sample, which is oriented in the growth direction. From the Raman data [1], we can determine not only the average velocities (the drift velocity), but also the distribution function of the carriers along the field direction.

Effect of Low Nitrogen Concentrations on the Electronic Properties of Inas1-Xnx

Cyclotron Resonance Mass and Fermi Energy Pinning in the In(AsN) Alloy

Hot Electron Transport And Impact Ionization In The Narrow Energy Gap Inas1-Xnx Alloy

Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties

Electron Coherence Length And Mobility In Highly Mismatched Iii-N-V Alloys

Effects of Substrate and N Content on the Growth of the Mid-Infrared Dilute Nitride InAsN Alloy

Conduction Band Offset and Electron Effective Mass in Gainnas/Gaas Quantum-Well Structures with Low Nitrogen Concentration

Theoretical Investigation of Structural, Mechanical and Electronic Properties of GaAs1-xNx Alloys under Ambient and High Pressure

Superconductivity of InN As an Intrinsic Property

A systematic study of spin-dependent recombination in GaAs$_{1-x}$N$_x$ as a function of nitrogen content

Nonresonant Hydrogen Dopants in In(Asn): A Route to High Electron Concentrations and Mobilities

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

Resonant Raman Scattering and Photoluminescence Emissions from above Bandgap Levels in Dilute GaAsN Alloys

Resonant Raman Scattering with the E+ Band in a Dilute GaAs1−xNx Alloy (X=0.1%)

Spatially resolved electronic structure of an isovalent nitrogen center in GaAs

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x

Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs

Intersubband Transitions in InGaAsN/GaAs Quantum Wells

Exciton localization and dynamics in GaNAsP nanowires

Alloy States in Dilute GaAs1−xNx Alloys (X<1%)