Abstract:Embedding rare-earth pnictide (RE-V) nanoparticles into III-V semiconductors enables unique optical, electrical, and thermal properties, with applications in THz photoconductive switches, tunnel junctions, and thermoelectric devices. Despite the high structural quality and control over growth, particle size, and density, the underlying electronic structure of these nanocomposite materials has only been hypothesized. Basic questions about the metallic or semiconducting nature of the nanoparticles (that are typically < 3 nm in diameter) have remained unanswered. Using first-principles calculations, we investigated the structural and electronic properties of ErAs nanoparticles in AlAs, GaAs, InAs, and their alloys. Formation energies of the ErAs nanoparticles with different shapes and sizes (i.e., from cubic to spherical, with 1.14 nm, 1.71 nm, and 2.28 nm diameters) show that spherical nanoparticles are the most energetically favorable. As the diameter increases, the Fermi level is lowered from near the conduction band to the middle of the gap. For the lowest energy nanoparticles, the Fermi level is pinned near the mid-gap, at about 0.8 eV above the valence band in GaAs and about 1.2 eV in AlAs, and it is resonant in the conduction band in InAs. Our results show that the Fermi level is pinned on an absolute energy scale once the band alignment at AlAs/GaAs/InAs interfaces is considered, offering insights into the rational design of these nanocomposite materials.

Cyclotron Resonance Mass and Fermi Energy Pinning in the In(AsN) Alloy

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Resonant Raman Scattering with the E+ Band in a Dilute GaAs1−xNx Alloy (X=0.1%)

Determination of Electron Effective Mass in InN by Cyclotron Resonance Spectroscopy

Resonant Raman Scattering and Photoluminescence Emissions from above Bandgap Levels in Dilute GaAsN Alloys

Nuclear magnetic resonance inverse spectra of InGaAs quantum dots: Atomistic level structural information

Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties

Fermi-level pinning in ErAs nanoparticles embedded in III-V semiconductors

Measurements of cyclotron resonance of the interfacial states in strong spin-orbit coupled 2D electron gases proximitized with aluminum

Alloy States in Dilute GaAs1−xNx Alloys (X<1%)

Native Defects in InxGa1−xN Alloys

Controlling Fermi level pinning in near-surface InAs quantum wells

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Infrared Spectrum of GaN1-xPx Ternary Alloy

Optical and transport properties of short period InAs/GaAs superlattices near quantum dot formation

Fine structure and magneto-optics of exciton, trion, and charged biexciton states in single InAs quantum dots emitting at 1.3 um

Electron and Hole G Tensors of Neutral and Charged Excitons in Single Quantum Dots by High-Resolution Photocurrent Spectroscopy

Colloidal Chemical Synthesis and Characterization of InAs Nanocrystal Quantum Dots

Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets

Optical orientation of nuclei in nitrogen alloys GaAsN at room temperature

Fermi-level Stabilization Energy in Group III Nitrides