Abstract:Knowledge of the carrier recombination, relaxation, and transport processes in InN materials is essential for determining the applicability of this material system in photonic and electronic applications. In this article, we provide a review of time-resolved spectroscopy experimental techniques and our recent results using these techniques to measure transient processes in InN. Specifically, subpicosecond differential transmission experiments were used to determine the carrier recombination lifetime and the carrier thermalization time of InN. In those experiments, we observed a fast initial hot carrier cooling followed by a slower recombination process. At short times after pulsed excitation, modeling of the observed relaxation suggests that the dominant energy relaxation process is longitudinal optical phonon scattering modified by a strong hot phonon effect at room temperature. An inverse proportionality between the carrier lifetime and the free electron concentration was found. This suggests that donor-like defects or impurities may stimulate the formation of non-radiative recombination centers. Furthermore, we report the measurements of in-plane carrier transport and hole mobility of an InN epilayer by time-resolved transient grating spectroscopy using subpicosecond pulses at 800 nm and ~1900 nm for grating writing and probing, respectively. The ambipolar diffusion coefficient Da = 2.0 cm2/s and hole mobility µh = 39 cm2/Vs at 300 K near the InN surface were determined by monitoring the transient grating kinetics at various grating periods.

Determination of Electron Effective Mass in InN by Cyclotron Resonance Spectroscopy

High-Precision Determination of Lattice Constants and Structural Characterization of Inn Thin Films

Determination of the Branch-Point Energy of InN: Chemical Trends in Common-Cation and Common-Anion Semiconductors

Cyclotron Resonance Mass and Fermi Energy Pinning in the In(AsN) Alloy

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

Phonon Polariton of InN Observed by Infrared Synchrotron Radiation

Puzzle Of Non-Surface Related 2d Electron Gas In N-Inn Epitaxial Samples

Effect of Electron Distribution in InN Films on Infrared Reflectance Spectrum of Longitudinal Optical Phonon-Plasmon Interaction Region

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Electron Transport in Inn Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect

Growth-dependent Phonon Characteristics in InN Thin Films

Structural Investigations of Epitaxial Inn by X-Ray Photoelectron Diffraction and X-Ray Diffraction

Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

Effect of Low Nitrogen Concentrations on the Electronic Properties of Inas1-Xnx

Non-Equilibrium Carrier Transport in A High-Quality Inn Film Grown on Gan

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

High-Electron-Mobility Inn Epilayers Grown On Silicon Substrate

20 Mev-Deep Donor Level in Inn Film of 0.76 Ev Band Gap Grown by Plasma-Assisted Nitrogen Source