Abstract:Hybrid superconductor-semiconductor heterostructures are a promising platform for quantum devices based on mesoscopic and topological superconductivity. In these structures, a semiconductor must be in close proximity to a superconductor and form an ohmic contact. This can be accommodated in narrow band gap semiconductors such as InAs, where the surface Fermi level is positioned close to the conduction band. In this work, we study the structural properties of near-surface InAs quantum wells and find that surface morphology is closely connected to low-temperature transport, where electron mobility is highly sensitive to the growth temperature of the underlying graded buffer layer. By introducing an In$_{0.81}$Al$_{0.19}$As capping layer, we show that we can modify the surface Fermi level pinning within the first nanometer of the In$_{0.81}$Al$_{0.19}$As thin film. Experimental measurements show a strong agreement with Schrödinger-Poisson calculations of the electron density, suggesting the conduction band energy of the In$_{0.81}$Ga$_{0.19}$As and In$_{0.81}$Al$_{0.19}$As surface is pinned to \SI{40}{\milli eV} and \SI{309}{\milli eV} above the Fermi level respectively.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to improve the electron mobility and the transport properties of 2DEG (two - dimensional electron gas) by controlling the Fermi - level pinning phenomenon in the near - surface quantum well of InAs (indium arsenide). Specifically, the authors studied the effects of different growth temperatures and the introduction of In$_{0.81}$Al$_{0.19}$As capping layers on the structure and transport properties of InAs near - surface quantum wells. ### Problem Background In semiconductor - superconductor heterostructures, especially in quantum devices based on mesoscopic and topological superconductivity, the semiconductor must be in close contact with the superconductor and form an ohmic contact. For narrow - gap semiconductors such as InAs, its surface Fermi - level is close to the bottom of the conduction band, which makes it an ideal material for achieving such contacts. However, the electron transport properties in the near - surface quantum well of InAs are seriously affected by surface roughness and the Fermi - level pinning phenomenon, resulting in low electron mobility. ### Research Objectives 1. **Optimize Growth Conditions**: Study the effects of different growth temperatures (T$_{GB}$ and T$_{QW}$) on the surface morphology and low - temperature transport properties of InAs near - surface quantum wells. 2. **Introduce Capping Layers**: By introducing In$_{0.81}$Al$_{0.19}$As capping layers, regulate the position of surface Fermi - level pinning, thereby improving the electron mobility and 2DEG transport properties. 3. **Experimental Verification**: Through experimental measurement and Schrödinger - Poisson calculation comparison, verify the validity of the theoretical model and determine the optimal capping layer thickness. ### Main Findings 1. **Relationship between Surface Morphology and Growth Temperature**: A higher growth temperature will lead to an increase in surface roughness, while a lower growth temperature helps to form a smoother surface. 2. **Effect of Capping Layers on Fermi - Level Pinning**: The introduction of In$_{0.81}$Al$_{0.19}$As capping layers can significantly change the position of surface Fermi - level pinning, increasing from 40 meV (In$_{0.81}$Ga$_{0.19}$As) to 309 meV (In$_{0.81}$Al$_{0.19}$As), thus effectively shielding 2DEG from surface scattering effects. 3. **Improvement of Electron Mobility**: By optimizing the capping layer thickness, the electron mobility has been significantly improved. In particular, in the sample with a 6 nm - thick In$_{0.81}$Al$_{0.19}$As capping layer, the mobility reaches 3.59 × 10$^4$ cm$^2$/Vs. ### Conclusion This study shows that by introducing In$_{0.81}$Al$_{0.19}$As capping layers, the Fermi - level pinning phenomenon in the near - surface quantum well of InAs can be effectively controlled, and the electron mobility and 2DEG transport properties can be significantly improved. These results provide important theoretical and experimental bases for the development of high - performance quantum devices.

Controlling Fermi level pinning in near-surface InAs quantum wells

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