Abstract:The photoluminescence (PL) and photoluminescence excitation spectra (PLE) of selected InxGa1-xN samples grown by metal organic chemical vapor deposition (MOCVD) have been investigated, and the analysis of structural and optical behaviors has been taken to study the existence of the microstructure InGaN alloys on the basis of X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements.XRD reveals that the sample is a single crystalline InxGa1-xN film formed predominantly in (0002) direction, the In mole composition x in InxGa1-xN film is calculated to be about 0.2 according to the Bragg's angle of InxGa1-xN (0002). The AFM plane-view and 3D images of the selected In0.2Ga0.8N sample show almost uniform island-like microstructure appearing to be composed of granular-crystalline in nanometer scale. The islands composed of the grapes-like have an average height of 10 nm at most and a mean size of 300 nm. The self-organized microstructure appeared to form cone and/or pyramid shape and tended to agglomerate island-like surface with RMS roughness about 10 nm, which attributed to Stranski-Krastanov growth mechanism. The comparison between PLE and PL under different exciting or monitoring energy allows determining the existence of wetting layer (WL)in the sample. The PLE and PL measurements show that the resonant absorption is related to the band gap and wetting layer of the alloy at different exciting and monitoring energy. It has been found that PLE peaks of the In0.2Ga0.8N alloy are dominated by 365 nm and 474 nm with monitoring wavelength 545 nm and 493 nm; the broad 545 nm and narrow 493 nm emission peaks are originated from In(Ga)N wetting layer and InGaN region respectively. The structural and optical analyses suggest that the origin of the exciton localization center is the self-formed islands. Hence, the irrelevancy of the PL spectra to the gap energy was explained in terms of fluctuation resulting from variations in grain size or shape. This type of localized center provides another physical model for the proposed localized states in InxGa1-xN epilayers. Further characterization of the InGaN systems is underway to help fully understand the correlation between the structural and the optical pro-perties of self-organized micro-structure of InGaN system.

Optical Investigation Of Strong Exciton Localization In High Al Composition Alxga1-Xn Alloys

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Optical Study of Electronic States in Gaasn

Optical Properties and Exciton Localization in Ganas/Gaas

Optical Study of Localized and Delocalized States in Gaasn/Gaas

Localized Exciton Dynamics in AlInGaN Alloy

Excitonic Luminescence Linewidths in Algan Alloys with High Aluminum Concentrations

Electron Localization and Emission Mechanism in Wurtzite (al, In, Ga)N Alloys

Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells

Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

The temperature dependence of optical properties of InGaN alloys

Excitons in the wurtzite AlGaN/GaN quantum-well heterostructures

Alloy States in Dilute GaAs1−xNx Alloys (X<1%)

First-principles Study of the Light-emitting Mechanism on (in,al)gan Alloys with Different Configurations

Optical Transitions In Ganas/Gaas Single Quantum Well

Anomalous Temperature-Dependent Photoluminescence Peak Energy in InAlN Alloys

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

Investigation of Localized State Emissions in Quaternary InGaAsSb/AlGaAsSb Multiple Quantum Wells Grown by Molecular Beam Epitaxy

Investigation on Optical and Micro-structural Properties of Inx Ga1-x N Alloys Grown by MOCVD