Abstract:Due to structural imperfection and indium content fluctuation, carriers' localization in an InGaN-based active layer can produce efficient luminescence and unusual thermodynamic behaviors. Spectral features associated with localization, such as the "S-shaped" shift of peak energy in temperature-dependent photoluminescence (PL) and the nonexponential decay in time-resolved photoluminescence (TRPL), have not yet formed a comprehensive physical interpretation. In this work, the thermal evolution of carriers' decay process is examined by spectroscopic approaches in high-efficiency InGaN/GaN multiple quantum well (MQW) samples. Based on the localized-state ensemble model, the peak shift in temperature-dependent PL is excellently fitted by the "red" and "blue" localization centers, which perfectly match with the fast and slow processes resolved from TRPL using biexponential model, All variations in emission peak, line shape, filling position, and lifetime with temperature are elucidated by carriers redistributing between two kinds of localization centers according to the density of states. Meanwhile, the impact of substrate and underlying layers in MQW samples has also been compared. Through such systematic analysis, the dynamics of carriers in MQWs have been quantitatively discussed, and a comprehensive understanding on the localization-induced luminescence mechanism is achieved.

Optical Investigation of Strong Exciton Localization in High Al Composition AlxGa1-xN Alloys

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Optical Study of Electronic States in GaAsN

Optical Properties and Exciton Localization in Ganas/Gaas

Optical Study of Localized and Delocalized States in GaAsN/GaAs

Localized Exciton Dynamics in AlInGaN Alloy

Excitonic Luminescence Linewidths in Algan Alloys with High Aluminum Concentrations

Electron Localization and Emission Mechanism in Wurtzite (al, In, Ga)N Alloys

Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells

Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate

Optical Properties and Band Lineup in Ganxas1-X/Gaas Single Quantum Wells

The temperature dependence of optical properties of InGaN alloys

Excitons in the wurtzite AlGaN/GaN quantum-well heterostructures

Alloy States in Dilute GaAs1−xNx Alloys (X<1%)

First-principles Study of the Light-emitting Mechanism on (in,al)gan Alloys with Different Configurations

Optical Transitions In Ganas/Gaas Single Quantum Well

Anomalous Temperature-Dependent Photoluminescence Peak Energy in InAlN Alloys

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

Influence of the Illumination on Weak Antilocalization in an AlxGa1−xN∕GaN Heterostructure with Strong Spin-Orbit Coupling

Deep localization features of photoluminescence in narrow AlGaN quantum wells