Abstract:Since the early 1960s, alloys are commonly grouped into two classes, featuring bound states in the bandgap (I) or additional, non-discrete band states (II). Microscopic material parameters for class I alloys can directly be extracted from photoluminescence (PL) spectra, whereas any conclusions drawn for class II alloys usually remain indirect and limited to macroscopic assertions. Nonetheless, here, we present a spectroscopic study on exciton localization in a so-called mixed crystal alloy (class II) that allows us to access microscopic alloy parameters. We study bulk In$_x$Ga$_{1-x}$N epilayers at the onset of alloy formation (0 $\leq$ $x$ $\leq$ 2.4%) in order to understand the material's particular robustness to defects. Based on an in-depth PL analysis it is demonstrated how different excitonic complexes (free, bound, and complex bound excitons) can serve as a probe to monitor the dilute limit of class II alloys. From an $x$-dependent linewidth analysis we extract the length scales at which excitons become increasingly localized, meaning that they convert from a free to a bound particle upon alloy formation. Already at x = 2.4% the average exciton diffusion length is reduced to 5.7 $\pm$ 1.3 nm at a temperature of 12 K, thus, detrimental exciton transfer mechanisms towards non-radiative defects are suppressed. In addition, the associated low temperature PL data suggests that a single indium atom does not suffice in order to permanently capture an exciton. Micro-PL spectra even give access to a forthright probing of silicon bound excitons embedded in a particular environment of indium atoms, thanks to the emergence of a hierarchy of individual, energetically sharp emission lines (full width at half maximum $\approx$ 300 $\mu$eV). Consequently, the present study allows us to extract first microscopic alloy properties formerly only accessible for class I alloys.

Excitonic Luminescence Linewidths in Algan Alloys with High Aluminum Concentrations

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Optical Investigation Of Strong Exciton Localization In High Al Composition Alxga1-Xn Alloys

Localized Exciton Dynamics in AlInGaN Alloy

Probing alloy formation using different excitonic species: The particular case of InGaN

Comparative Study Of Intersubband Absorption In Algan/Gan And Alinn/Gan Superlattices: Impact Of Material Inhomogeneities

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

First-principles Study of the Light-emitting Mechanism on (in,al)gan Alloys with Different Configurations

Photoluminescence and Its Time Evolution of AlN Thin Films

Thermal Redistribution of Localized Excitons and Its Effect on the Luminescence Band in InGaN Ternary Alloys

Optical Study of Electronic States in Gaasn

Anomalous Temperature-Dependent Photoluminescence Peak Energy in InAlN Alloys

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Photoluminescence of Energetic Particle-Irradiated Inxga1-Xn Alloys

Dependence on Al Concentration of the Optical Phonons of AlxGa1−xN Films

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

Resonant Raman Scattering and Photoluminescence Emissions from above Bandgap Levels in Dilute GaAsN Alloys

Impact of random alloy fluctuations on the electronic and optical properties of (Al,Ga)N quantum wells: Insights from tight-binding calculations

Deep‐ultraviolet luminescence properties of AlN

Alloy States in Dilute GaAs1−xNx Alloys (X<1%)

Exciton localization and dynamics in GaNAsP nanowires