Abstract:Aluminum nitride (AlN) is a multifunctional semiconductor. AlN doped with rare earth ions has broad application prospects in monochromatic lighting, color display, laser medium, medical treatment, etc. In this paper, an Er 3+ -doped AlN film has been prepared by radio frequency magnetron sputtering and characterized by surface morphology, chemical composition and photoluminescence (PL) , focusing on the emission mechanism of Er 3+ in the AlN host . The films show PL in a wide range of the visible (540, 560 and 668 nm) and near-infrared ( 816, 869, 985 and 1534 nm ) ranges . It has been found a certain energy transfer bridge between Er 3+ and AlN defect-related optical transitions. At 532 nm excitation, V Al -O N vacancy-oxygen complex in the AlN host efficiently absorbs photons, then, nonradiative charge transfer (NRET) occurs from the defect levels to the levels of Er 3+ since they are in resonance. Since there is a resonance of a donor emission level and an acceptor absorption level, Förster resonance energy transfer (FRET) occurs with the transfer efficiency about 51%. This results in a very strong enhancement of excitation of the 4f related PL. On the contrary, optical excitation at other energies results in a low intensity of the Er 3+ PL. As a matter of facts, a strong absorption of the AlN host and the FRET-enabling resonance of donor-acceptor levels allow for a great enhancement of the PL efficiency of Er 3+ ions. The results show that the impurity defect state of AlN has an important influence on the Er 3+ luminescence efficiency.

Photoluminescence and Its Time Evolution of AlN Thin Films

Deep‐ultraviolet luminescence properties of AlN

Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering

Light Emission Properties and Mechanism of Low-Temperature Prepared Amorphous Sinx Films. I. Room-Temperature Band Tail States Photoluminescence

Anomalous Temperature-Dependent Photoluminescence Peak Energy in InAlN Alloys

Transition from Bound to Free Excitons Observed in Deep- Ultraviolet Photoluminescence of Aln Grown by Mocvd

Effect of Impurities on Raman and Photoluminescence Spectra of AlN Bulk Crystals

Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

Cathodoluminescence studies of point defects in aluminum nitride

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Formation and photoluminescence properties of AlN nanowires

Excitonic Luminescence Linewidths in Algan Alloys with High Aluminum Concentrations

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

Low-temperature Synthesis of AlN Films Through Electron Cyclotron Resonance Plasma-Aided Reactive Pulsed Laser Deposition

Photochromism and influence of point defect charge states on optical absorption in aluminum nitride (AlN)

Visible and infrared photoluminescence of Er-doped AlN films: Excitation of Er ions via efficient nonradiative energy transfer from the host level

Morphology Evolution, Growth Mechanism and Optical Properties of AlN Nanostructures

Effect of nitrogen flow ratio on the structure and optical properties of AlN film

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy