Abstract:The effect of magnetron power on the room temperature 1.54 $\mu$m infra-red photoluminescence intensity of erbium doped AlN films grown by r. f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon substrates. The study presents relative photoluminescence intensities of nanocrystallized samples prepared with identical sputtering parameters for two erbium doping levels (0.5 and 1.5 atomic %). The structural evolution of the crystallites as a function of the power is followed by transmission electron microscopy. Copyright line will be provided by the publisher 1 Introduction For some time now, rare-earth (RE)-doped semiconductors represent significant potential applications in the field of opto-electronic technology. Part of this technological interest relies on the shielded 4f levels of the RE ions as they give rise to sharp and strong luminescence peaks [1-5]. Among the RE elements, Er is preferred to its counterparts since the Er ions can produce both visible light at 558 nm (green, one of the primary colours) and IR light at 1.54 $\mu$m whose spectrum region coincides with the main low-loss region in the absorption spectrum of silica-based optical fibres, combining so potential applications towards photonic devices and towards optical communication devices operating in the infrared domain. These interesting emissions can however only be exploited when placed into host matrixes. On one side, the shielding of the intra 4f levels prevents the shifting of the RE 3+ energy levels and ensures the frequency emission stability. Moreover the intra 4f transitions are parity forbidden for the isolated ions. Matrixes can render the Er 3+ ions optically active, via a relaxation of selection rules due to crystal field effects. As silicon based materials were tested in the 1960s to the 90s with no clear industrial success it was found that the

Visible and infrared photoluminescence of Er-doped AlN films: Excitation of Er ions via efficient nonradiative energy transfer from the host level

Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering

Influence of the magnetron power on the Er-related photoluminescence of AlN:Er films prepared by magnetron sputtering

Investigation of Energy Transfer Mechanism in Er3+ and Tm(3+)doped AlN Crystalline Films

Structural, chemical and optical characterizations of nanocrystallized AlN:Er thin films prepared by r.f. magnetron sputtering

Deep‐ultraviolet luminescence properties of AlN

Erbium location into AlN films as probed by spatial resolution experimental techniques

Room-Temperature Visible Electroluminescence from Aluminum Nitride Thin Film Embedded with Aluminum Nanocrystals

Electroluminescence from Light-Emitting Devices Based on Erbium-Doped ZnO/n-Si Heterostructures: Enhancement Effect of Fluorine Co-Doping

Light-Emitting Devices Based on Erbium-Doped Tio2/P(+)-Si Heterostructures: Engineering of Electroluminescence Via Aluminum Co-Doping

Current Driving Er-Doped Electroluminescence Devices With Long-Term Reliability

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Ni-Enhanced Photoluminescence of Er~(3+) Doped in Si-Rich Nitride

Up-converted white light emission in Er3+ doped MgAl2O4 nanocrystals

Enhanced Emission of Er3+ from Alternately Er Doped Si-Rich Al2o3 Multilayer Film with Si Nanocrystals As Broadband Sensitizers

Photoluminescence Properties of Er3+-doped Al2O3 Film Synthesized from Er-ion-implanted Γ-Alooh Xerogel

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Photoluminescence and Characteristics of Terbium-Doped AlN Film Prepared by Magnetron Sputtering

Photoluminescence thermometry using broadband multi-peak detection in Eu 2+ /Eu 3+ -codoped oxygen-rich AlN film

Yellow Electroluminescence from Sputtering Synthesized Aluminum Nitride Nanocomposite Thin Film Containing Aluminum Nanocrystals