Abstract:Rare‐earth semiconducting mononitrides (RENs) are an emerging class of materials due to their unique electronic and magnetic properties originating from strongly localized 4f orbitals. Erbium nitride (ErN) is one of the most promising REN and attracts significant interest for spintronics, thermoelectric, and Gifford–McMahon cryo‐cooler applications. However, despite such progress, growth and characterization of the physical properties of ErN are rather challenging due to its propensity for oxidation, and no report on its thermal transport properties exists to date. Recently, high‐quality ErN thin films are deposited and are stabilized in ambient with thin capping layers. Herein this letter, first‐principles density functional perturbation theory to model the vibrational spectrum of ErN is utilized and the calculations with the phonon frequency measurements with inelastic Raman spectroscopy are verified. Consistent with its polar dielectric nature, ErN exhibits a longitudinal‐optical transverse‐optical phonon mode splitting at the Γ‐point with a separation of 333 cm−1. Time‐domain thermoreflectance is used to measure the low‐temperature (80 –300 K) thermal conductivity of ErN films. At room temperature, ErN films exhibit a low thermal conductivity of 1.16 ± 0.15 and 2 ± 0.2 W mK−1 on (001) MgO and (0001) Al2O3 substrates, respectively, making them attractive for thermoelectrics and thermal barrier coating applications. Erbium nitride (ErN) is a rare‐earth rock salt semiconductor and attracts significant interest for spintronic, thermoelectric, and Gifford–McMahon cryo‐cooler applications. Herein this work, Upadhya et al. report temperature‐dependent thermal conductivity and vibrational spectrum of ErN determined with a combination of time‐domain thermoreflectance, Raman spectroscopy, and first‐principles density‐functional perturbation theory analysis.

Erbium location into AlN films as probed by spatial resolution experimental techniques

Structural, chemical and optical characterizations of nanocrystallized AlN:Er thin films prepared by r.f. magnetron sputtering

Influence of the magnetron power on the Er-related photoluminescence of AlN:Er films prepared by magnetron sputtering

Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering

Visible and infrared photoluminescence of Er-doped AlN films: Excitation of Er ions via efficient nonradiative energy transfer from the host level

Investigation of Energy Transfer Mechanism in Er3+ and Tm(3+)doped AlN Crystalline Films

Room temperature cathodoluminescence quenching of Er3+ in AlNOEr

Direct observation of Eu atoms in AlN lattice and the first-principles simulations

Europium Location in the Aln: Eu Green Phosphor Prepared by A Gas-Reduction-Nitridation Route

Vibrational Spectrum and Thermal Conductivity of Rare‐Earth Semiconducting Erbium Nitride Thin Films

Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films

Combinatorial synthesis and characterization of thin film Al1-xRExN (RE = Pr3+, Tb3+) heterostructural alloys

Direct Detection of Rare Earth Ion Distributions in Gallium Nitride and Its Influence on Growth Morphology

Effects of Eu Ions Dose and Annealing Temperature on the Structural and Optical Properties of Eu-implanted AlN Thin Films

Room-Temperature Visible Electroluminescence from Aluminum Nitride Thin Film Embedded with Aluminum Nanocrystals

Photoluminescence and Characteristics of Terbium-Doped AlN Film Prepared by Magnetron Sputtering

Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature

Structure and spectroscopic properties of Er3+ doped LiNbO3 thin film grown by e-beam evaporation

Fabrication and characterization of highly luminescent Er3+:Al2O3 thin films with optimized growth parameters

First-Principles Study of Electronic Structure and Optical Properties of La-Doped AlN

Ni-Enhanced Photoluminescence of Er~(3+) Doped in Si-Rich Nitride