Luminescence Properties and Energy Transfer Mechanism of Eu3+ and Tm3+ Co-doped AlN Thin Films
Wang Dan,Xia Yonglu,Wang Xiaodan,Chen Huajun,Chen Jiafan,Mao Hongmin,Zeng Xionghui,Xu Ke
DOI: https://doi.org/10.1016/j.jlumin.2021.118082
IF: 3.6
2021-01-01
Journal of Luminescence
Abstract:As an important semiconductor material,GaN is widely studied for its photoelectric properties. In order to save energy and adapt to the development of miniaturization,it is a current development trend to integrate three-primary colors(RGB) light-emitting devices on chips. GaN as a relatively mature light-emitting host,can achieve full band light emitting from ultra-violet to infra-red by doping different rare earth ions. Therefore,rare earth doped GaN materials have an important application prospect in white light emitting diodes. Hence,in this paper Eu3+ or Tm3+ doped GaN films were prepared by ion implantation method. The effects of different temperatures and ion implantation doses on the luminescence properties of GaN: Eu3+,Tm3+ films were investigated. Finally,the mechanism of energy transfer interaction between Eu3+ and Tm3+ was also analyzed. In terms of material preparation,firstly GaN thin films with thickness of 5 mu m were grown on c-plane sapphire substrate by Metal-organic Chemical Vapor Deposition(MOCVD). Then, different doses of Eu3+ or Tm3+ ions were implanted into GaN films by ion implantation, respectively. To remove the crystal lattice damage,the samples were annealed at 1040 degrees C under flowing NH3 atmosphere for 2 h. The luminescence properties of GaN: Eu3+, Tm3+ films were studied by Temperature-Dependent Photoluminescence(TDPL) spectra. On one hand,at room temperature,five transition peaks at 544,601,622,633 and 665 nm were observed,corresponding to the Eu3+ 5D1 -> F-7(1), D-5(0)-> F-7(1),D-5(0)-> F-7(2),D-5(1)-> F-7(4) and D-5(0)-> F-7(3) transitions,respectively. On the other hand,three kinds of Eu3+ D-5(0)-> F-7(2) and D-5(1)-> F-7(4) emission peaks labeled as P-1-P-7 with different temperature-dependent properties were found in which P-2 and P-6 emission peaks show similar temperature dependence;the temperature dependence of P1 emission peak is different from that of P-2; but the P-3,P-4,P-5 and P-7 emission peaks have similar temperature dependence. In addition,Cathodoluminescence(CL) spectra showed that co-doping Eu3+ and Tm3+ in GaN films achieved the mixing of the luminescence colors of the two rare earth ions,and the emission peak positions of Eu3+ and Tm3+ were not significantly different from those Eu3+,Tm3+ single doped GaN films. With the increase of Tm3+ dose, Eu3+ emission intensity and I-480/ I-806 intensity ratio of Tm3+ decreased,which reveals an energy transfer of Eu3+-> Tm3+. There is a small energy difference (similar to 60 meV)between the D-5(2)-> F-7(0)(similar to 2.66 eV)transition of Eu3+ and the (1)G(4)-> H-3(6)(similar to 2.60 eV)transition of Tm3+. Therefore, phonon-assisted non- radiative resonance energy transfer is highly possible between Eu3+ and Tm3+ ions. After detailed analysis,herein there are three energy transfer pathways between Eu3+ and Tm3+ ions which are(D-5(2) [Eu3+] , (1)G(4) [Tm3+]) -> (F-7(0) [Eu3+] , H-3(6) [Tm3+] ) , (D-5(0) [Eu3+] , H-3(6) [Tm3+]) -> (F-7(2) [Eu3+] , F-3(2)[Tm3+]) and (D-5(0) [Eu3+] , H-3(6) [Tm3+] ) -> (F-7(3) [Eu3+] , F-3(3)[Tm3+] ), respectively. Furthermore, through calculating and analyzing, we proved that the energy transfer mechanism is mainly an electric dipole-electric dipole interaction. According to the color temperature calculation formula,the luminescence chromaticity coordinates and the Correlated Color Temperature (CCT)of the samples were calculated. With the increase of the implanted dose of Tm3+, the luminescence color of the samples was gradually regulated by the blue luminescence of Tm3+. By changing the dose ratio in GaN: Eu3+ , Tm3+ films,the luminescence color of the materials was effectively regulated.This research provides a feasible method for GaN based light-emitting materials,and reveals the great potential of rare earth ions in the field of full-color display.