Preparation and Photoluminescence Properties of Tb3+-doped Al2O3 Films on Silicon Substrates

Tao SHI,Jian ZHOU,Qian-Hong SHEN,Hui YANG
DOI: https://doi.org/10.3724/SP.J.1077.2009.01105
IF: 1.292
2009-01-01
Journal of Inorganic Materials
Abstract:Tb3+-doped Al2O3 films on silicon substrates were prepared by the sol-gel. The Tb3+-doped Al2O3 films were characterized by differential thermal analysis/thermogravimetric analysis, X-ray diffraction, scanning electron microscope, atomic force microscope and photoluminescence spectra as well. The photoluminescence mechanism of Tb3+-doped Al2O3 films was analyzed. The effects of heat-treatment temperature and Tb3+ ion concentration on the luminescence property of Tb3+:Al2O3 films were discussed. The results show that the prepared Al2O3:Tb3+ films has high luminescence intensity, the optimum excitation wavelength is 240nm, the optimum concentration of Tb3+ dopant is 5 mol%, and the main emission is at surface texture with a roughness of less than 1.3nm. It is suggested that the film is good enough for fabrication and application of silicon based photoelectronic devices.
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