PREPARATION, STRUCTURE AND LUMINESCENCE PROPERTIES OF Lu_2O_3:Tb FILMS

谢杰,施鹰,谢建军,邱华军,宋国新
DOI: https://doi.org/10.14062/j.issn.0454-5648.2010.02.026
2010-01-01
Abstract:Uniform and crack free Tb3+ doped lutetium oxide (Lu2O3:Tb) films were prepared by Pechini sol-gel method combined with the spin-coating technique.The thermal decomposition behavior of the dried gel precursor from room temperature to 1 000 ℃ was analyzed by a thermogravimetry-differential scanning calorimetry.Effects of the heat-treatment temperature on the phase composition,structural characters and surface morphology of Lu2O3:Tb films were investigated by X-ray diffraction,Fourier transformed infrared spectroscopy and atomic force microscope.The results show that the films heat-treated between 550-1 000 ℃ have a Lu2O3 polycrystalline state with cubic structure,and its grain size grows to around 30 nm with the increasing of the temperature.The main luminescence emission peaks of Lu2O3:Tb films excited by a 220 nm light are located at 542 and 551 nm.With the raising of the annealing temperature,the defect in the Lu2O3:Tb films decreases and the luminescence emission intensity of films increases.
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