Preparation of Tb3+-Ion-Doped Si-Based Light-Emitting Materials with Sol-Gel Method

DT Xie,JG Wu,G Ma,WF Yan,WJ Zhou,GX Xu,DF Xu,J Tao,GG Qin

DOI: https://doi.org/10.7498/aps.48.1773

1999-01-01

Abstract:By sol-gel process and appropriate heat treatment,Tb3+-doped light-emitting films were prepared on the silicon bases.The structural changes of the xerogels and the fluorescence properties of the Tb3+ ions doped were studied by photol

What problem does this paper attempt to address?

Design, Simulation, Elaboration and Luminescence of Tb3+-doped Ba0.84Gd0.16F2.16 Fluoroaluminosilicate Scintillating Glass Ceramics

SunYueZi Chen,WenNa Zhang,LiMing Teng,Jing Chen,XinYuan Sun,Hai Guo,XuSheng Qiao

DOI: https://doi.org/10.1016/j.jeurceramsoc.2021.05.064

IF: 5.7

2021-01-01

Journal of the European Ceramic Society

Abstract:Extensive researches on scintillators have been executed to satisfy the excellent radiation detection materials in broad applications. However, practical application of conventional scintillators is limited due to the limitations of high cost, time-consuming fabrication process and insufficient radioluminescence. Herein, high density precursor glass doped with Tb3+ was designed to absorb X-ray efficiently and produce green emission. Molecular dynamics simulation was used to simulate the phase separation process in melting process. Then, Tb3+-doped Ba0.84Gd0.16F2.16 glass ceramics (GCs) with excellent structural and optical properties were elaborated by melt quenching technic and further heat treating. Their structural properties, photoluminescence (PL) and X-ray excited luminescence (XEL) were explored detailedly. The internal quantum efficiency of PL is 64 % in GCs. The XEL intensity is 192 % of that of B4Ge3O12 (BGO) commercial scintillator. Our results suggest that Ba0.84Gd0.16F2.16:Tb3+ GCs might have potential application in X-ray detection.
Photoluminescence of Tb3+ Doped SiNx Films Grown by Plasma-Enhanced Chemical Vapor Deposition

Zhizhong Yuan,Dongsheng Li,Minghua Wang,Peiliang Chen,Daoren Gong,Lei Wang,Deren Yang

DOI: https://doi.org/10.1063/1.2358301

IF: 2.877

2006-01-01

Journal of Applied Physics

Abstract:Room temperature photoluminescence (PL) properties of the Tb3+ ion implanted nonstoichiometric silicon nitride (Tb3+:SiNx) and silicon dioxide (Tb3+:SiOx) were studied. The films were deposited by plasma-enhanced chemical vapor deposition and then annealed at different temperatures for 1h in flowing N2 before or after the implantation. Results show that there are four intense PL peaks due to the intra-4f transitions of Tb3+ in the wavelength from 470to625nm for both kinds of films. Moreover, after postannealing at 1000°C, the integrated PL intensity of Tb3+:SiNx is much higher than that of Tb3+:SiOx. The energy transfer from the defect related energy levels to the Tb3+ ions will enhance the D45→Fk7 (k=3–6) luminescence of Tb3+ ions.
Structure and Luminescence Properties of Tb-doped Si-based Light-emitting Materials in Preparation Process

吴红英,王喜贵,谢大翁,翁诗甫,吴瑾光

2001-01-01

Acta Physico-Chimica Sinica

Abstract:Tb3+ ions were incorporated in SiO2 glasses using a sol-gelprocess with appropriate heat treatment.Glasses incorporated with Tb3+ showed emission peaks at 488,544,585,and 620 nm,respectively,exhibiting,respectively,5D4-7FJ(J=3,4,5,6) transition of the Tb3+ions.The structural evolution during the transition from gel to glass of Tb3+-doped SiO2 glasses and the effect on luminescence properties were studied by excitation spectra,emission spectra,IR,far-IR and DTA-TG at differential heat treatment conditions.The results show that most of absorbed water molecules in gel were removed during heat treatment at 50～100 ℃ ,conversion from gel to glasses was the main structural changes when gel was heat-treated in the range 150～ 500 ℃ ,and the luminescence intensity increased remarkably also,becoming stable structure at 800 ℃ .This observation leads to a conclusion that the radiation electronic transitions of Tb3+ were quenched strongly by O－H group and were enhanced by temperature elevation.
Preparation and Photoluminescence Properties of Eu3+-Doped Al2O3 Films on Silicon Substrates by the Sol-gel Method

Shi Tao,Zhou Jian,Shen Qianhong

2010-01-01

Rare Metal Materials and Engineering

Abstract:Eu3+-doped Al2O3 films on silicon substrates were prepared by the sol-gel method. The Eu3+-doped Al2O3 films were characterized by differential thermal analysis/thermogravimetric analysis, X-ray diffraction, scanning electron microscope, atomic force microscope and photoluminescence spectra as well. The photoluminescence mechanism of Eu3+-doped Al2O3 films was analyzed. The effects of heat-treating temperature and Eu3+ ion concentration on the luminescence property of Al2O3:Eu3+ films were discussed. The results show that the prepared Al2O3:Eu3+ films have high luminescence intensity, the optimum excitation wavelength is 265 nm, the optimum concentration of Eu(3+)dopant is 10 mol%, and the main emission is at 617 nm under excitation of 265 nm. The prepared Al2O3:Eu3+ film has a dense, smooth and crack-free surface texture with a roughness less than 1.4 nm. It is concluded that the film is good enough for fabrication and application of silicon based photoelectronic devices.
Preparation and Photoluminescence Properties of Tb3+-doped Al2O3 Films on Silicon Substrates

Tao SHI,Jian ZHOU,Qian-Hong SHEN,Hui YANG

DOI: https://doi.org/10.3724/SP.J.1077.2009.01105

IF: 1.292

2009-01-01

Journal of Inorganic Materials

Abstract:Tb3+-doped Al2O3 films on silicon substrates were prepared by the sol-gel. The Tb3+-doped Al2O3 films were characterized by differential thermal analysis/thermogravimetric analysis, X-ray diffraction, scanning electron microscope, atomic force microscope and photoluminescence spectra as well. The photoluminescence mechanism of Tb3+-doped Al2O3 films was analyzed. The effects of heat-treatment temperature and Tb3+ ion concentration on the luminescence property of Tb3+:Al2O3 films were discussed. The results show that the prepared Al2O3:Tb3+ films has high luminescence intensity, the optimum excitation wavelength is 240nm, the optimum concentration of Tb3+ dopant is 5 mol%, and the main emission is at surface texture with a roughness of less than 1.3nm. It is suggested that the film is good enough for fabrication and application of silicon based photoelectronic devices.
Structure and Luminescence Properties of Tb-doped Sibased Light-emitting

Wu Hong-Ying,Wang Xi-Gui,Xie Da-Tao,Weng Shi-Fu,Wu Jinguang

DOI: https://doi.org/10.3866/PKU.WHXB20010111

2001-01-01

Acta Physico-Chimica Sinica

Abstract:Tb3+ ions were incorporated in SiO2 glasses using a sol-gel process with appropriate heat treatment. Glasses incorporated with Tb3+ showed emission peaks at 488, 544, 585, and 620 nm, respectively, exhibiting, respectively, D-5(4)-(7) FJ(J = 3, 4, 5, 6) transition of the Tb3+ ions. The structural evolution during the transition from gel to glass of Tb3+ -doped SiOz glasses and the effect on luminescence properties were studied by excitation spectra, emission spectra, LR, far-IR and DTA-TG at differential heat treatment conditions. The results show that most of absorbed water molecules in gel were removed during heat treatment at 50 similar to 100. degreesC, conversion from gel to glasses was the main structural changes when gel was heat-treated in the range 150 similar to 500 degreesC, and the luminescence intensity increased remarkably also, becoming stable structure at 800 degreesC. This observation leads to a conclusion that the radiation electronic transitions of Tb3+ were quenched strongly by O - H group and were enhanced by temperature elevation.
Luminescence Behavior of Eu(Ttfa)(3) Doped B2o3-Sio2 Film Prepared by Sol-Gel Process

XP Fan,HW Yao,ZY Wang,MQ Wang

DOI: https://doi.org/10.1117/12.517446

2003-01-01

Abstract:Luminescence behavior of Eu(TTFA)3 doped B2O3-SiO2 films prepared by sol-gel process has been investigated. With the increase of heat treatment temperature and time, the Eu(TTFA)3 complexes were gradually synthesized and luminescence intensity gradually increased. There existed an efficient luminescence layer in the Eu(TTFA)3 doped B2O3-SiO2 films. The thickness of the efficient luminescence layer depends significantly on the B2O3 content of the gel. The thickness of the efficient luminescence layer decreased obviously with increase of B2O3 contents in B2O3-SiO2 gel films. The influence of the film thickness on the transmitted intensity of the Eu(TTFA)3 doped B2O3-SiO2 gel films indicated that the thickness of the efficient luminescence layer of the Eu(TTFA)3 doped B2O3-SiO2 films depended on the absorption of incident excitation light by the organic ligands in the gel film.
Luminescence Enhancement of Ce3+/Tb3+ Co-Doped SiO2 Thin Film on Silicon Substrate Prepared by Sol-Gel Spin Coating Process

Feng Guo,Xin Zhang,Li Zhuang,Qinghui Jin,Jiawen Jian,Xiaowei Zhang

DOI: https://doi.org/10.1080/09500340.2021.1883758

IF: 1.3

2021-01-01

Journal of Modern Optics

Abstract:In this work, the luminescence performance of Ce3+ as a sensitizer co-doped with Tb3+ ions in sol-gel silica thin film on silicon substrate has been investigated. Results obtained with x-ray diffraction indicated that SiO2 crystalline was unchanged after 1000 degrees C annealing. In our experiment, although some Ce3+ has been converted to Ce4+ ions during the annealing process, but it has limited impact on increasing trend of emission intensity with the growth of Ce concentration. The luminescence data, including photoluminescence spectra, photoluminescence excitation spectra and fluorescence decay lifetimes indicates that Ce3+ is an efficient sensitizer to feed Tb3+ ions in sol-gel silica film. The calculated energy transfer between Ce3+ and Tb3+ reaches 52.95%. Compared with powder, the film structure provides better tolerance on oxidation and the quench threhold of RE ions is much higher.
Photoluminescence of Tb3+-doped SiNx films with different Si concentrations

Zhizhong Yuan,Dongsheng Li,Minghua Wang,Daoren Gong,Peihong Cheng,Peiliang Chen,Deren Yang

DOI: https://doi.org/10.1016/j.mseb.2007.07.023

2008-01-01

Abstract:Tb3+-doped SiNx films (SiNx:Tb3+) were prepared by plasma-enhanced chemical vapor deposition (PECVD) and ion-implantation. And the effects of the SiNx substrates with different Si concentrations on the light emission of Tb3+ were investigated. Experimental results show that two groups of photoluminescence (PL) peaks of Tb3+ ions were observed in different SiNx:Tb3+ films. And the PL intensity increased with annealing temperature. The defect states of N and Si dangling bonds of the SiNx substrate had little effect on the light emission of Tb3+ after the high-temperature annealing. For the annealed Si-rich SiNx (SRN) film, Si nanoclusters precipitated from the host matrix. The increased oxygen concentration and the optical absorption due to the band tail states and Si nanoclusters of the annealed SRN film decreased the light emission of Tb3+ ions.
Structural evolution and fluorescence properties of Tb3+-doped silica xerogels in the gel to glass conversion

Qian Guodong,Wang Minquan,Wang Mang,Fan Xianping,Hong Zhanglian

DOI: https://doi.org/10.1016/S0022-2313(97)89362-3

IF: 3.6

1997-01-01

Journal of Luminescence

Abstract:The Tb3+-doped silica glasses were prepared by a sol-gel process with appropriate heat treatment. The structural changes during the gel to glass transition of Tb3+-doped silica xerogels and the effect on fluorescence properties of Tb3+ were studied in this paper. The results show that the doped silica glasses may be obtained after the xerogels are heat-treated at 800 °C for 24 h. During heat treatment at 400 °C, the residual organic molecules and most of the absorbed water molecules in silica xerogels are removed, and the SiO4 tetrahedral structural network forms and strengthens gradually with decreasing number of silanol (SiOH) groups. The fluorescence intensity of Tb3+ ions increases remarkably when the doped xerogel is heat-treated in the range 300–500 °C, and increases slowly above 500 °C(up to 800 °C). This observation leads to a conclusion that the radiative transitions of Tb3+ ion in the aqueous gels are quenched strongly by the high-frequency vibrations of OH groups from the coordinated water rather than physically absorbed water. The inhomogeneity in the site state of Tb3+ ions increases with rise in temperature of heat treatment, which broadens the emission bands of Tb3+ ions doped in silica glasses. Moreover, there will also be an additional interaction owing to the influence of the ligand field of the glasses, which makes the emission bands shift to red and produces Stark splitting of the Tb3+ ion energy levels.
Dynamic study on in-situ synthesis of Eu(TTA)3 in the SiO 2 films prepared by sol-gel process

Xianping Fan,Zhiyu Wang,Minquan Wang

2004-01-01

Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

Abstract:The synthesis in situ of Eu(TTA)3 in the SiO2 films was investigated. The Thenoyltrifluoroacetone (TTA) was dissolved in ethanol in advance, and then the EuCl3 and ethanol containing TTA were introduced into the initial precursor sol. The precursor sol was dip-coated onto substrates to form Eu(TTA)3 doped SiO2 films. The relationship between luminescence intensity of EuCl3 and TTA co-doped SiO2 films and heat treatment time can be described by JMA equation. The activation energy of the synthesized process of Eu(TTA)3 in the SiO2 films was calculated.
Dynamic study on in-situ synthesis of Eu(TTA)(3) in the SiO2 films prepared by sol-gel process

XP Fan,ZY Wang,MQ Wang

2004-01-01

Rare Metal Materials and Engineering

Abstract:The synthesis in situ of Eu(TTA)(3) in the SiO2 films was investigated. The Thenoyltrifluoroacetone (TTA) was dissolved in ethanol in advance, and then the EuCl3 and ethanol containing TTA were introduced into the initial precursor sol. The precursor sol was dip-coated onto substrates to form Eu(TTA)(3) doped SiO2 films. The relationship between luminescence intensity of EuCl3 and TTA co-doped SiO2 films and heat treatment time can be described by JMA equation. The activation energy of the synthesized process of Eu(TTA)(3) in the SiO2 films was calculated.
Spectroscopic Studies of Rare Earth Ions in Silica Glasses Prepared by the Sol-Gel Process

XP Fan,MQ Wang,GH Xiong

DOI: https://doi.org/10.1016/0167-577x(95)00279-0

IF: 3

1996-01-01

Materials Letters

Abstract:Spectroscopic properties of Tb3+, Eu3+, Er3+ and Pr3+ ions in silica glasses prepared by sol-gel techniques have been investigated. The results showed that the emission spectrum of Tb3+ consisted of transitions from the 5D4 excited level and the 5D3 excited level to the 7F manifold of the ground state. The emission bands of Eu3+, Er3+ and Pr3+ consisted of transitions from the single excited level (5D0 excited level of Eu3+, 4S32 excited level of Er3+ and 1D2 excited level of Pr3+) to the manifold of the ground state. It was also found that the emission intensities of rare earth ions in silica glasses were significantly dependent upon the energy gap between the emitting level and the next level. The relative emission intensities of rare earth ions in silica glasses followed the series Tb3+ > Eu3+ > Er3+ > Pr3+.
Synthesis Of Er3+ Doped Silicon Based Light Emitting Material By Sol Gel Method

DaTao Xie,Xiaogang Wang,Yizhuang Xu,Jinguang Wu.,Guangxian Xu

DOI: https://doi.org/10.1117/12.382871

2000-01-01

Abstract:We suggested a new synthesis process, the sol-gel method, to incorporate high concentration of Er3+ ions into the silicate film on silicon substrate. The coating solutions with uniformly dispersed metal ions were prepared from Er(NO)(3) solution, Si(OC2H5)(4) and ethanol. Spin coating was carried out onto a treated mono-crystalline silicon (100) substrate, at a speed of about 4000-rpm for 8s. The precursor films were annealed in air at 500 degrees C for 2 hours. Er-related similar to 1.54 mu m photoluminescence was observed at room temperature. The optimal doped concentrations of Er3+ in SiO2 film was estimated at about similar to 10(21)/cm(3). Through characterizations of AFM, FTIR, DTA, TG and EXAFS, we found that: the synthesized film is compact and smooth in microscope; 500 degrees C annealing is enough to perform the structure change of gel to glass; and, the Er-O formed complex with coordinate number of 9. Because of the formation of Er-O complex, Er-O-Si can form the net structure in the synthesized film. The configuration could not only increase the optical activity of ions, but also improve the homogenous of Er3+ ions in SiO2. Thus we demonstrated the sol-gel process is an efficient way to overcome the quench effect of concentration and increase the distribution quality.
Preparation and luminescence properties of Ce3+ and Tb 3+ co-doped glasses and glass ceramics containing SrF2 nanocrystals

Qun Luo,Xvsheng Qiao,Xianping Fan,Xianghua Zhang

DOI: https://doi.org/10.1016/j.jnoncrysol.2010.09.018

IF: 4.458

2010-01-01

Journal of Non-Crystalline Solids

Abstract:The Ce3+ and Tb3+ co-doped glasses and glass ceramics containing SrF2 nanocrystals were prepared by melt-quenching and subsequent heat treating and their luminescence properties were described. The formation of SrF2 nanocrystals in glass ceramics was confirmed by X-ray diffraction and transmission electron microscopy. The XRD patterns and photoluminescence spectra revealed that the Ce3+ ions and Tb3+ ions have been incorporated into SrF2 nanocrystals. The decay time of excited states has been used to reveal the energy transfer mechanism between Ce3+ and Tb3+. The emission intensity of Tb3+ ions in the glass ceramics was much stronger than that in the precursor glass, which could be ascribed to the more efficient energy transfer from Ce3+ to Tb3+ in the glass ceramics due to the enrichment of Ce3+ and Tb3+ ions and the shortening of the distance between Ce3+ and Tb3+ ions in the precipitated SrF2 nanocrystals. The glasses and glass ceramics could emit bright green light by adjusting concentration ratio of Ce3+ to Tb3+ and heat treatment temperature.
Preparation and characterization of luminescent thin films doped with rare earth (Tb3+, Eu3+) complexes derived from a sol–gel process

Qingguo Meng,Hongjie Zhang,Shubin Wang,Lianshe Fu,Youxuan Zheng,Kuiyue Yang

DOI: https://doi.org/10.1016/S0167-577X(00)00107-5

IF: 3

2000-01-01

Materials Letters

Abstract:Sol–gel derived luminescent thin films doped with rare earth (RE) complexes were prepared using an in-situ synthesis method with a two-step hydrolysis process and the luminescence spectra were measured. Fluorescence lifetime and thermal stability were investigated. The results show that a broad excitation band indicates the formation of RE complexes in the solid thin films. RE ions, which are restrained in a silica matrix, present longer lifetime and higher thermal stability than that in DMF/PVB films containing the corresponding pure complexes.
Structure And Luminescence Properties Of Si(5)P(6)O25 : Tb3+ System

Xg Wang,Hy Wu,Zl Yang,Sf Weng,Jg Wu

DOI: https://doi.org/10.3321/j.issn:1001-4861.2003.02.023

2003-01-01

Chinese journal of inorganic chemistry

Abstract:Tb3+ ions were incorporated in P-Si matrix material through a sol-gel process. Luminescence properties of Tb3+ as a function of dopant, firing temperature, composition and structure of matrices were investigated. The gels synthesized by the reaction Of P2O5 or H3PO4 With tetraethoxy silane and TbCl3 as dopant were fired in air from the temperature 25 similar to 1000degreesC to form P-Si crystalline phase. The crystal structure was determined by powder X-ray diffraction. Si5O(PO4)(6) were the only crystalline phase and belong to hexagonal crystal system. The emission of D-5(4)-F-7(5)( similar to 545nm) transition of Tb3+ in the P-Si system is composed of two peaks. The amount of doping Tb3+ varied from 0.664% to 1.644%, and no obvious concentration quenching was observed in this doping concentration range. The intensity of Tb3+ emission increased with firing temperature increasing and becomes stable at 800 similar to 1000degreesC.
Preparation and Luminescence Properties of Ormosil Hybrid Materials Doped with Tb(Tfacac)3phen Complex Via a Sol–gel Process

Junfang Guo,Lianshe Fu,Huanrong Li,Youxuan Zheng,Qingguo Meng,Shubin Wang,Fengyi Liu,Jun Wang,Hongjie Zhang

DOI: https://doi.org/10.1016/s0167-577x(03)00237-4

IF: 3

2003-01-01

Materials Letters

Abstract:In this paper, silica-based transparent organic–inorganic hybrid materials were prepared via the sol–gel process. Tetraethoxysilane (TEOS) and 3-glycidoxypropyltrimethoxysilane (GPTMS) were used as the inorganic and organic precursors, respectively. The terbium complex, Tb(Tfacac)3phen (Tfacac=1,1,1-trifluoroacetylacetone, phen=1, 10-phenanthroline) was successfully doped into organically modified silicate (ormosil) matrix derived from TEOS and GPTMS, and the luminescent properties of the resultant ormosil composite phosphors [ormosil/Tb(Tfacac)3phen] were investigated compared with those of the Tb(Tfacac)3phen incorporated into SiO2 derived from TEOS (labeled as silica/Tb(Tfacac)3phen). Both kinds of the materials show the characteristic green emission of Tb3+ ion. The luminescence behavior of the resultant composite products was dependent on the matrix composition. The optimized lanthanide complex concentration in the ormosil/Tb(Tfacac)3phen was increased compared with in silica/Tb(Tfacac)3phen. Furthermore, the lifetime of Tb3+ in Tb(Tfacac)3phen, silica/Tb(Tfacac)3phen and ormosil/Tb(Tfacac)3phen follows the sequence: ormosil/Tb(Tfacac)3phen>silica/Tb(Tfacac)3phen>pure Tb(Tfacac)3phen.
Luminescence Behavior of the Eu(Ttfa)(3) and Tbssa Co-Doped Xerogel

XP Fan,ZY Wang,MQ Wang

DOI: https://doi.org/10.1016/s0022-2313(02)00343-5

IF: 3.6

2002-01-01

Journal of Luminescence

Abstract:Luminescence behavior of Eu(TTFA)3 and TbSSA co-doped gel has been investigated. The excitation and emission spectra of the EuCl3 and thenoyltrifluoroacetone co-doped gel appeared to exhibit intramolecular energy transfer from the coordinated thenoyltrifluoroacetonate to the europium ions, and the luminescence behavior of sulphosalicylic acid and TbCl3 co-doped gel also indicated the synthesis of TbSSA in the gel. The luminescence behavior of x% Eu(TTFA)3 and (1–x)% TbSSA (x=0–1) co-doped gel changed significantly with the ratio of Eu(TTFA)3 and TbSSA. By adjusting the ratio of the Eu(TTFA)3 and TbSSA in the gel, the luminescence of different colors which resulted from the mixture of the emission bands of Eu3+ ions and Tb3+ ions can be observed.
Preparation of CaYAl3O7:Ce3+, Tb3+ Blue-Green Phosphors by Sol-Gel Process

Dai Jun,Lin Xiang,Qiao Xusheng,Fan Xianping

2010-01-01

Rare Metal Materials and Engineering

Abstract:Preparation of CaYAl3O7:Ce3+, Tb3+ phosphors by sot-gel process and their luminescence properties were investigated. The energy transfer efficiencies between Ce3+ ions and Tb3+ ions resulted in strong emission of Tb3+ ions by 360 nm light as excitation source. The CaYAl3O7:0.03Ce(3+),0.19Tb(3+) phosphors which were sintered for at 900 degrees C 6 h in reducing atmosphere can emit stronger blue-green light.

Preparation of Tb3+-Ion-Doped Si-Based Light-Emitting Materials with Sol-Gel Method

Design, Simulation, Elaboration and Luminescence of Tb3+-doped Ba0.84Gd0.16F2.16 Fluoroaluminosilicate Scintillating Glass Ceramics

Photoluminescence of Tb3+ Doped SiNx Films Grown by Plasma-Enhanced Chemical Vapor Deposition

Structure and Luminescence Properties of Tb-doped Si-based Light-emitting Materials in Preparation Process

Preparation and Photoluminescence Properties of Eu3+-Doped Al2O3 Films on Silicon Substrates by the Sol-gel Method

Preparation and Photoluminescence Properties of Tb3+-doped Al2O3 Films on Silicon Substrates

Structure and Luminescence Properties of Tb-doped Sibased Light-emitting

Luminescence Behavior of Eu(Ttfa)(3) Doped B2o3-Sio2 Film Prepared by Sol-Gel Process

Luminescence Enhancement of Ce3+/Tb3+ Co-Doped SiO2 Thin Film on Silicon Substrate Prepared by Sol-Gel Spin Coating Process

Photoluminescence of Tb3+-doped SiNx films with different Si concentrations

Structural evolution and fluorescence properties of Tb3+-doped silica xerogels in the gel to glass conversion

Dynamic study on in-situ synthesis of Eu(TTA)3 in the SiO 2 films prepared by sol-gel process

Dynamic study on in-situ synthesis of Eu(TTA)(3) in the SiO2 films prepared by sol-gel process

Spectroscopic Studies of Rare Earth Ions in Silica Glasses Prepared by the Sol-Gel Process

Synthesis Of Er3+ Doped Silicon Based Light Emitting Material By Sol Gel Method

Preparation and luminescence properties of Ce3+ and Tb 3+ co-doped glasses and glass ceramics containing SrF2 nanocrystals

Preparation and characterization of luminescent thin films doped with rare earth (Tb3+, Eu3+) complexes derived from a sol–gel process

Structure And Luminescence Properties Of Si(5)P(6)O25 : Tb3+ System

Preparation and Luminescence Properties of Ormosil Hybrid Materials Doped with Tb(Tfacac)3phen Complex Via a Sol–gel Process

Luminescence Behavior of the Eu(Ttfa)(3) and Tbssa Co-Doped Xerogel

Preparation of CaYAl3O7:Ce3+, Tb3+ Blue-Green Phosphors by Sol-Gel Process