Abstract:The Tb3+-doped silica glasses were prepared by a sol-gel process with appropriate heat treatment. The structural changes during the gel to glass transition of Tb3+-doped silica xerogels and the effect on fluorescence properties of Tb3+ were studied in this paper. The results show that the doped silica glasses may be obtained after the xerogels are heat-treated at 800 °C for 24 h. During heat treatment at 400 °C, the residual organic molecules and most of the absorbed water molecules in silica xerogels are removed, and the SiO4 tetrahedral structural network forms and strengthens gradually with decreasing number of silanol (SiOH) groups. The fluorescence intensity of Tb3+ ions increases remarkably when the doped xerogel is heat-treated in the range 300–500 °C, and increases slowly above 500 °C(up to 800 °C). This observation leads to a conclusion that the radiative transitions of Tb3+ ion in the aqueous gels are quenched strongly by the high-frequency vibrations of OH groups from the coordinated water rather than physically absorbed water. The inhomogeneity in the site state of Tb3+ ions increases with rise in temperature of heat treatment, which broadens the emission bands of Tb3+ ions doped in silica glasses. Moreover, there will also be an additional interaction owing to the influence of the ligand field of the glasses, which makes the emission bands shift to red and produces Stark splitting of the Tb3+ ion energy levels.

Structure And Luminescence Properties Of Si(5)P(6)O25 : Tb3+ System

Photoluminescence of Tb3+ Doped SiNx Films Grown by Plasma-Enhanced Chemical Vapor Deposition

Structure and Luminescence Properties of Tb-doped Sibased Light-emitting

Structure and Luminescence Properties of Tb-doped Si-based Light-emitting Materials in Preparation Process

Photoluminescence of Tb3+-doped SiNx films with different Si concentrations

Enhanced photoluminescence of Tb3+ in SnO2 film by phosphorus diffusion process

Concentration effects and stability behavior of TbSSA complex luminescence in sol–gel derived host materials

Luminescence Properties of Tb3+ in Silica Material

Luminescence Behavior of the Eu(Ttfa)(3) and Tbssa Co-Doped Xerogel

The In-Situ Synthesis Process and Luminescence Behavior of a P-Hydroxybenzoic Acid–terbium Complex in Sol–gel Derived Host Materials

Luminescence Enhancement of Ce3+/Tb3+ Co-Doped SiO2 Thin Film on Silicon Substrate Prepared by Sol-Gel Spin Coating Process

Luminescence Behavior of Eu(Ttfa)(3) Doped B2o3-Sio2 Film Prepared by Sol-Gel Process

Luminescence Properties And Energy Transfer Of Ce3+,Tb3+-Coactivated-Sialon Phosphors

Enhancement of Luminescent Properties of Sol-Gel-Derived BaTiO3: Pr

[Effect of Al3+ on Luminescence Intensity of Tb in Silica Glasses].

Photoluminescence, scintillation, and dosimetric properties of Tb-doped Mg2SiO4 single crystals

High-pressure synthesis, crystal structure and photoluminescence properties of a new terbium silicate: Na2Tb1.08Ca2.92Si6O18H0.8

Study on mechanism controlling 5D3/5D4emissions of Tb3+ in glasses

Preparation and Luminescence Properties of Ormosil Hybrid Materials Doped with Tb(Tfacac)3phen Complex Via a Sol–gel Process

Preparation of Tb3+-Ion-Doped Si-Based Light-Emitting Materials with Sol-Gel Method

Structural evolution and fluorescence properties of Tb3+-doped silica xerogels in the gel to glass conversion