Abstract:The structural and optical properties of In0.20Ga0.80N/AlxInyGa1 (x) N-y multiple quantum wells samples with varying Al content in barrier layers grown on sapphire substrates by metalorganic chemical vapor deposition have been investigated by means of high-resolution X-ray diffraction, Raman scattering measurements and temperature-dependent photoluminescence. Raman measurements verified the existence of In-rich clusters in ternary and quaternary layers. At 10 K and 300 K, the PL spectrum of each sample is dominated by a sharp emission peak arising from In0.20Ga0.80N well layers. The anomalous temperature-dependent S-shaped behaviors of emission energies have been observed, indicating the presence of localized states induced by the potential fluctuations in the quantum wells due to the inhomogeneous distribution of In-rich clusters. The degree of the localization effect and the transition temperatures between different temperature regions can be enhanced by increasing Al content in barrier layers. The improvement of the localized states emission has been observed at the lower energy side of band gap emission of quantum wells with increasing Al content. The origin of the deep localized states could be attributed to the larger quantum-confined Stark effect in the quantum wells with higher Al content. The recombination mechanism of carriers between band edge and localized states was proposed for interpreting of the emission characteristics. (C) 2014 Elsevier B.V. All rights reserved.

Deep localization features of photoluminescence in narrow AlGaN quantum wells

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths*

Localization Effect in Green Light Emitting Ingan/Gan Multiple Quantum Wells with Varying Well Thickness

Single Peak Deep Ultraviolet Emission and High Internal Quantum Efficiency in AlGaN Quantum Wells Grown on Large Miscut Sapphire Substrates

Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

Influence of InGaN Growth Rate on the Localization States and Optical Properties of InGaN/GaN Multiple Quantum Wells

Deep-UV Emission at 260 Nm from MBE-grown AlGaN/AlN Quantum-Well Structures

Individually Resolved Luminescence from Closely Stacked GaN/AlN Quantum Wells

Time-resolved and Temperature-Varied Photoluminescence Studies of InGaN/GaN Multiple Quantum Well Structures

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

Local Surface Plasmon Enhanced Polarization and Internal Quantum Efficiency of Deep Ultraviolet Emissions from AlGaN-based Quantum Wells

Photoluminescence of Green InGaN/GaN MQWs Grown on Pre-Wells*

Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence

Effect of Localization States on the Electroluminescence Spectral Width of Blue–green Light Emitting InGaN/GaN Multiple Quantum Wells

Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate

Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN

Radiative Recombination Mechanism of Carriers in InGaN/AlInGaN Multiple Quantum Wells with Varying Aluminum Content

Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer

Photoluminescence Properties of Blue and Green Multiple InGaN/GaN Quantum Wells

Investigation of the influence of InGaN underlying layers on the optical properties of InGaN quantum well structures

Excitonic Localization at Macrostep Edges in Algan/Algan Multiple Quantum Wells