Abstract:Three dual-wavelength InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) with increasing indium content are grown by metal-organic chemical vapor deposition, which contain six periods of low-In-content MQWs and two periods of high-In-content MQWs. For the low-In-content MQWs of three studied samples, their internal quantum efficiency (IQE) shows a rising trend as the emission wavelength increases from 406 nm to 430 nm due to the suppression of carriers escape from the wells to the barriers. However, for the high-In-content MQWs, the sample IQE falls rapidly with a further increase of emission wavelength from 496 nm to 575 nm. Theoretical calculation reveals that the electron-hole wave function overlap in the high-In-content MQWs is reduced because of an increase in the internal polarization field as indium content is increased. In addition, time-resolved photoluminescence decay curves show that the carriers generated in the low-In-content MQWs can be effectively transferred to the high-In-content part through the reabsorption process. However, the transfer time gradually becomes longer as emission wavelength increases, which means a reduction of carrier transfer rate between the different indium content MQWs. Furthermore, nonradiative recombination is enhanced in the high-In-content MQWs with longer emission wavelength due to the decline of crystal quality. Therefore, the fast drop of IQE for high-In-content MQWs can be attributed to the increase of the internal polarization field, the decrease of carrier transfer efficiency, and the enhanced nonradiative recombination. This research has a certain guiding value for an understanding of the recombination mechanism in the InGaN/GaN MQWs and for achieving high quality multiple-wavelength LEDs with better performance.

Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer

Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "negative" Thermal Activation Energy.

Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

Efficient Deep Ultraviolet Emission from Self-Organized AlGaN Quantum Wire Array Grown on Ultrathin Step-bunched AlN Templates

Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

Growth of high-quality near-ultraviolet light-emitting diodes used InGaN/GaN multiple quantum wells

Enhancement of Light-Emission Efficiency of Ultraviolet InGaN/GaN Multiple Quantum Well Light Emitting Diode with InGaN Underlying Layer

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode

Investigation of the Light Emission Properties and Carrier Dynamics in Dual-Wavelength InGaN/GaN Multiple-Quantum Well Light Emitting Diodes

Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

Effect Of An Indium-Doped Barrier On Enhanced Near-Ultraviolet Emission From Ingan/Algan: In Multiple Quantum Wells Grown On Si(111)

Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures

Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells

Deep localization features of photoluminescence in narrow AlGaN quantum wells

Carrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells: An important role of effective carrier transfer

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer

On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes

Suppressing the luminescence of V-related point-defect in AlGaN grown by MOCVD on HVPE-AlN