Abstract:The group-Ⅲ nitrides and their related ternary alloys have been becoming the most attractive material for light emitting diodes (LEDs) and laser diodes (LDs) in the UV and blue spectral range. However, the origins of the yellow luminescence (YL), which is commonly observed in almost undoped and n-type GaN, remain unclear. The nature and the role of initial nitridation of sapphire surface and the generation of threading dislocation (TD) are ambiguous too. It is a possible way to resolve the above problems by studying the microstructures and optical properties combining the growth conditions. In this work, two kinds of GaN films were grown by MOCVD under different initial nitridation time (180 seconds for Sample A, and 90s for Sample B). The growth temperature is about 950℃. The cross-sectional transmission electron microscope (TEM) is performed near the GaN/sapphire interface. Corresponding the growth processes, there are three zones in the GaN layer: buffer layer, zone and sound zone. There are haystack-like domains in the faulted zone, in which there are high density of extended defects. The thickness of the faulted zone is about 0.4μm. Just above this region, the defects density is reduced sharply, and the quality of the layer is improved, which is identified by electron diffraction (ED) patterns. In comparison, Sample A shows about an order lower density of extended defects than Sample B, their columnar diameter is larger and its ED pattern is sharper, too. The buffer layer of Sample B is more smooth than Sample A. The appropriate rougher morphology of the buffer layer may cause that the structural disorder between the high-temperature (HT) grown island and the buffer layer is accommodated by Frank and Shockley partial dislocations. However, the TD is likely to propagate into the HT GaN from the smooth surface of the buffer layer grown after extensively nitridation of substrate. According to the position and width of X-ray diffraction peaks of (0002) and (0004), the size of crystalline grain, D and the residual strain could be calculated. The values of(D,e in)of Sample A and B are (175nm,0.167%) and (90nm,0.141%), respectively. Small size of crystalline grain may be advantageous to relieve the lattice and thermal mismatch stress, but it lead to higher density of extended defects. The width of GaN (0002) reflections of Sample A is 4min lower than that of Sample B. This result may be due to the lower screw TD. The higher density of screw TD may widen the GaN (0002) peak in X-ray rocking curve. In room temperature PL spectra, the ratio of band-edge emission intensity to YL one of Sample A is 3 orders larger than that of Sample B. Furthermore the YL in Sample B is stronger and has fine structure, while that in Sample A is nearly invisible in the PL spectrum. The GaN epilayer with high quality exhibits almost no YL emission. It is well known that the YL corresponds to the deformed crystal structure. We assigned that the screw TD and mixed TD are attributed to the YL referring to our XRD results.

Optical and Structural Properties of GaN1-xPx Ternary Alloys

Characterization of GaN1−xPx Alloys Grown by Metal-Organic Chemical Vapor Deposition

Structure properties of GaN1-xPx ternary alloys grown by metal-organic chemical vapor deposition

GaN1−xPx Ternary Alloys with High P Composition Grown by Metal-Organic Chemical Vapor Deposition

Raman and Infrared Spectra Study of GaN1-xPx Ternary Alloys Grown by MOCVD

Raman Studies of Phosphorus Incorporation in GaN1−xPx Alloys

Optical Properties of Phase-Separated GaN 1− X P X Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition

Structural Properties of Gan1-Xpx Films

Infrared Reflectance of Gan1-Xpx Ternary Alloys Grown by Metalorganic Chemical Vapor Deposition

Infrared Spectrum of GaN1-xPx Ternary Alloy

Infrared studies of GaN1-xPx ternary alloys

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Structural and Optical Properties of Al 1-X in X N Epilayers on GaN Template Grown by Metalorganic Chemical Vapor Deposition

The Solubility of Phosphorus in GaN

Microstructural and Optical Properties of GaN Films on Nitrided Sapphire Substrates

Phase-separation Suppression in GaN-rich Side of GaNP Alloys Grown by Metal–organic Chemical Vapor Deposition

Investigation on Optical and Micro-structural Properties of Inx Ga1-x N Alloys Grown by MOCVD

Optical and Electronic Properties of InGaN Thin Film Layers

First-principles Investigation on Optical Properties of GaN and InGaN Alloys

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

X-Ray Spectroscopy Studies on Ni_(100-x)P_x Alloys