Abstract:III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber layer or a charge-selective contact in PEC for integrated and direct solar fuel production, due to its tunable lattice constant, electronic band structure, and favorable optical properties. To enhance the stability of its surface against chemical corrosion which leads to decomposition, we deposit a GaN protection and passivation layer. The n-doped GaInP(100) epitaxial layers were grown by metalorganic chemical vapor deposition on top of GaAs(100) substrate. Subsequently, thin 1-20 nm GaN films were grown on top of the oxidized GaInP surfaces by atomic layer deposition. We studied the band alignment of these multi-junction heterostructures by X-ray and ultraviolet photoelectron spectroscopy. Due to the limited emission depth of photoelectrons, we determined the band alignment by a series of separate measurements in which we either modified the GaInP(100) surface termination or the film thickness of the grown GaN on GaInP(100) buffer layers. On n-GaInP(100) surfaces prepared with the well-known phosphorus-rich (2x2)/c(4x2) reconstruction we found up-ward surface band bending (BB) of 0.34 eV, and Fermi level pinning due to the present surface states. Upon oxidation, the surface states are partially passivated resulting in a reduction of BB to 0.12 eV and a valence band offset (VBO) between GaInP and oxide bands of 2.0 eV. Between the GaInP(100) buffer layer and the GaN passivation layer, we identified a VBO of 1.8 eV. The corresponding conduction band offset of -0.2 eV is found to be rather small. Therefore, we evaluate the application of the GaN passivation layer as a promising technological step not only to reduce surface states but also to increase the stability of the surfaces of photoelectrochemical devices.

The Solubility of Phosphorus in GaN

Raman Studies of Phosphorus Incorporation in GaN1−xPx Alloys

Optical and Structural Properties of GaN1-xPx Ternary Alloys

GaN1−xPx Ternary Alloys with High P Composition Grown by Metal-Organic Chemical Vapor Deposition

Characterization of GaN1−xPx Alloys Grown by Metal-Organic Chemical Vapor Deposition

Infrared Reflectance of Gan1-Xpx Ternary Alloys Grown by Metalorganic Chemical Vapor Deposition

Structure properties of GaN1-xPx ternary alloys grown by metal-organic chemical vapor deposition

Phase-separation Suppression in GaN-rich Side of GaNP Alloys Grown by Metal–organic Chemical Vapor Deposition

Vapor–liquid–solid growth of highly stoichiometric gallium phosphide nanowires on silicon: restoration of chemical balance, congruent sublimation and maximization of band-edge emission

Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Surface Electronic Properties of N‐ and P‐type InGaN Alloys

Optical Properties of Phase-Separated GaN 1− X P X Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1- xN

Infrared Spectrum of GaN1-xPx Ternary Alloy

Growth of In‐rich and Ga‐rich InGaN Alloys by MOCVD and Fabrication of InGaN‐based Photoelectrodes

Structural Properties of Gan1-Xpx Films

Study of Photoluminescence and Absorption in Phase-Separation InGaN Films

Discovering the Incorporation Limits for Wurtzite AlPyN1-y Grown on GaN by Metalorganic Vapor Phase Epitaxy

Gallium Nitride Films Synthesized by Reactive Pulsed Laser Deposition from A Gaas Target

Alloying strategy for two-dimensional GaN optical emitters