Abstract:We investigated the chemical beam epitaxy of GaP1-xNx to correlate the growth parameters with their properties when they are grown on nominally (001)-oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode as well as the chemical, morphological and structural properties of samples prepared using different growth temperatures and N precursor fluxes were analyzed by RHEED, XRD, RBS, NRA, EDX spectroscopy, AFM and TEM. Our results show that, up to x = 0.04, it is possible to synthesize smooth and chemically homogeneous GaP1-xNx layers with a high-structural quality in a 2D fashion, namely, layer-by-layer. For a given N mole fraction, the layer-by-layer growth mode is favored by lowering the growth temperature while decreasing the N precursor flux. As the flux of the N precursor is increased at a given temperature to enhance N incorporation, the quality of the layers degrades upon exceeding a temperature-dependent threshold; above this threshold, the growing layer experiences a growth mode transition from 2D to 3D after reaching a critical thickness of a few nm. Following that transition, the morphology and the chemical composition become modulated along the [110] direction with a period of several tens of nm. The surface morphology is then characterized by the formation of {113}-faceted wires, while the N concentration is enhanced at the troughs formed in between adjacent (113) and (-1-13) facets. We conclude on the feasibility of fabricating homogeneous thick GaP1-xNx layers lattice matched to Si (x = 0.021) or even with N content up to x=0.04. The possibility of exceeding a N mole fraction of 0.04 without inducing coupled morphological-compositional modulations has also been demonstrated when the layer thickness is kept below the critical value for the 2D-3D growth mode transition.

Discovering the Incorporation Limits for Wurtzite AlPyN1-y Grown on GaN by Metalorganic Vapor Phase Epitaxy

Research on the mechanism and influence of P incorporation in N-rich nitride AlPN and growth of high quality AlPN/GaN HEMT

Pseudomorphic growth of a thin-GaN layer on the AlN single-crystal substrate using metal organic vapor phase epitaxy

Effect of AlN Nucleation Layer on the Structural Properties of Bulk GaN Grown on Sapphire by Molecular-Beam Epitaxy

High Quality InAlN/GaN Heterostructures Grown on Sapphire by Pulsed Metal Organic Chemical Vapor Deposition

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Improved Surface Morphology and Reduced V-Pits Density of Lattice-Matched Alinn Films Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition

GaN1−xPx Ternary Alloys with High P Composition Grown by Metal-Organic Chemical Vapor Deposition

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Growth and Characteristics of Epitaxial Al X Ga 1− X N by MOCVD

Effect of Growth Temperature of AlN Interlayers on the Properties of GaN Epilayers Grown on C‐plane Sapphire by Metal Organic Chemical Vapor Deposition

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE

Growth modes and coupled morphological-compositional modulations in GaP1-xNx layers grown on nominally (001)-oriented Si substrates

Pulsed sputtering epitaxy of coherent AlN/Al0.5Ga0.5N/AlN multichannel structures

Effect of AlN Interlayer on the Impurity Incorporation of GaN Film Grown on Sputtered AlN

Phase-separation Suppression in GaN-rich Side of GaNP Alloys Grown by Metal–organic Chemical Vapor Deposition

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

Plasma Assisted Molecular Beam Epitaxy Growth Mechanism of AlGaN Epilayers and Strain Relaxation on AlN Templates

High Al-content AlInGaN Epilayers with Different Thicknesses Grown on GaN/sapphire Templates