Abstract:The emerging ultrawide-bandgap AlGaN alloy system holds promise for the development of advanced materials in the next generation of power semiconductor and UV optoelectronic devices. Within this context, heterostructures based on III-nitrides are very popular in view of their applications as electronics and optoelectronics components. AlGaN-based deep UV emitters are gaining visibility for their disinfection capabilities. Likewise, high electron mobility transistors are attracting increasing attention owing to their superior electron transport which yields high-speed and high-power applications. Those devices are conventionally made of AlGaN/GaN heterostructures grown on foreign substrate. However, structural defects, including stress induced by a mismatch in unit cell parameters and the presence of dislocations, can not only decrease the efficiency of the light emitters (by facilitating the non-radiative recombination of electron-hole pairs), it also impede electron mobility within the two-dimensional electron gas at the AlGaN/GaN interface. Therefore, the significance of obtaining high-quality AlGaN layers becomes evident. Including a thin AlN interlayer between the GaN buffer layer and AlGaN is a possible answer to address these drawbacks. Not only do we show that a thin AlN layer, approximately ≤ 3 nm in thickness, between the GaN buffer and AlGaN layers, is effective in decreasing the dislocation densities in the AlGaN layer by around 30%. Still, this is responsible of an increase in the electron mobility (approximately 33%) compared to a classical AlGaN/GaN heterostructure. Additionally, the resulting heterostructure exhibits better optical quality, with a 7-fold increase in intensity as well as a 20% reduction in full-width at half-maximum in the AlGaN emission.

Pulsed sputtering epitaxy of coherent AlN/Al0.5Ga0.5N/AlN multichannel structures

The Effects of LT AlN Buffer Thickness on the Properties of High Al Composition AlGaN Epilayers

AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer

Improved Surface Morphology and Reduced V-Pits Density of Lattice-Matched Alinn Films Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition

Growth and characterization of AlInN/GaN superlattices

Lattice-Matched Multiple Channel AlScN/GaN Heterostructures

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire

A Low-Temperature Aln Interlayer to Improve the Quality of Gan Epitaxial Films Grown on Si Substrates

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates

Very High Channel Conductivity In Ultra-Thin Channel N-Polar Gan/(Aln, Inaln, Algan) High Electron Mobility Hetero-Junctions Grown By Metalorganic Chemical Vapor Deposition

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy

Plasma Assisted Molecular Beam Epitaxy Growth Mechanism of AlGaN Epilayers and Strain Relaxation on AlN Templates

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Impact of thick N-polar AlN growth on crystalline quality and electrical properties of N-polar GaN/AlGaN/AlN FET

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Effect of the Twist Crystallinity of N‐Polar AlN Underlayer on the Electrical Properties of GaN/AlN Structures