Low Temperature Au-In-Au Metallic Bonding and Its Application in the Fabrication of Vcsels

Xie Zhengsheng,Wu Huizhen,Lao Yanfeng,Liu Cheng,Cao Meng
DOI: https://doi.org/10.3321/j.issn:0412-1961.2007.03.008
IF: 1.797
2007-01-01
ACTA METALLURGICA SINICA
Abstract:The Au-In-Au low temperature metallic bonding and its application in the structure fabrication of long wavelength vertical cavity surface emitting laser (VCSEL) devices were investigated. The low temperature metallic bonding technique not only improves the thermal characteristic of the bonded devices, but also enhances the reflectivity of the distributed Bragg reflectors (DBR) in the VCSEL structure. The experimental results show that InP based epitaxial VCSEL structure was successfully metallic bonded to the Si substrate at 200 degrees C with high bonding strength, and the bonding quality meets the requirements in the device fabrication of VCSEL. The optical characterization of the bonded samples indicates that the process of low temperature metallic bonding have rarely influence on the optical performance of VCSEL active region and DBR. So this low temperature metallic bonding technique can be used in the structure fabrication of VCSEL devices. And it is expected to be applied in the fabrication of other semiconductor photoelectric devices.
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