Abstract:GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced by near-junction Joule-heating, which degrades device performance and reliability. Increasing the TBC between GaN and SiC will aid in the heat dissipation of GaN-on-SiC power devices, taking advantage of the high thermal conductivity of the SiC substrate. However, a good understanding of the TBC of this technically important interface is still lacking due to the complicated nature of interfacial heat transport. In this work, a lattice-mismatch-insensitive surface activated bonding method is used to bond GaN directly to SiC and thus eliminating the AlN layer altogether. This allows for the direct integration of high quality GaN layers with SiC to create a high thermal boundary conductance interface. TDTR is used to measure the thermal properties of the GaN thermal conductivity and GaN-SiC TBC. The measured GaN thermal conductivity is larger than that of GaN grown by MBE on SiC, showing the impact of reducing the dislocations in the GaN near the interface. High GaN-SiC TBC is observed for the bonded GaN-SiC interfaces, especially for the annealed interface whose TBC (230 MW/m2-K) is close to the highest values ever reported. To understand the structure-thermal property relation, STEM and EELS are used to characterize the interface structure. The results show that, for the as-bonded sample, there exists an amorphous layer near the interface for the as bonded samples. This amorphous layer is crystallized upon annealing, leading to the high TBC found in our work. Our work paves the way for thermal transport across bonded interfaces, which will impact real-world applications of semiconductor integration and packaging.

Controlling Electronic Properties of Wafer-Bonded Interfaces among Dissimilar Materials: A Path to Developing Novel Wafer-Bonded Devices

Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions

Observations of Interfaces in Direct Wafer-Bonded InP–GaAs Structures

Design of AlInAs/InP Tunnel Junction and Its Application in Devices

Suppression of Anomalously Large Threshold Voltage in Wafer-Bonded Vertical Transistors by Enhancing Critical Field to Impact Ionization

InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (Bavets)

Wafer-scale bonded GaN–AlN with high interface thermal conductance

Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs

Wafer-Bonded P-N Heterojunction of GaAs and Chemomechanically Polished N-Polar GaN

CMOS Integration of InGaAs Nmosfets and Ge Pmosfets with Self-Align Ni-based Metal S/D Using Direct Wafer Bonding

High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces

Heterojunctions fabricated by surface activated bonding–dependence of their nanostructural and electrical characteristics on thermal process

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

Wafer bonding technology and its applications in optoelectronic devices and materials

Electrical and Structural Analysis of β‐Ga2O3/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer

Impact of Gate-Aperture Overlap on the Channel-Pinch off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor

Schottky-Barrier Height Modulation of Metal/In0.53ga0.47as Interfaces by Insertion of Atomic-Layer Deposited Ultrathin Al2o3

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

Β-Ga2o3 Van Der Waals P-N Homojunction

Integration of High-Performance InGaAs/GaN Photodetectors by Direct Bonding Via Micro-transfer Printing.