Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer
Huang Yi,Yanjun Wu,Sheng Gao,Qi Wang,Zhang Hongsheng,Wang Haishi,Genquan Han
DOI: https://doi.org/10.1088/1361-6641/ad7c76
IF: 2.048
2024-09-20
Semiconductor Science and Technology
Abstract:In this paper, we propose an enhanced superjunction AlGaN/GaN current aperture vertical electron transistor (CAVET) that integrates a novel hybrid InGaN/AlN/InGaN current blocking layer (CBL) situated above the P-column, directly beneath the channel. The incorporation of InGaN substantially elevates the device's saturation output current by introducing a subchannel beneath the AlGaN/GaN heterojunction conducting channel.Nonetheless, the introduction of AlN engenders a two-dimensional hole gas (2DHG) of opposite polarisation direction via the GaN/AlN heterojunction, which aids in depleting the two-dimensional electron gas (2DEG) within the channel, thereby mitigating the issue of negative threshold voltage (Vth) bias occasioned by the subchannel introduced by InGaN. The outcomes demonstrate that the maxim m saturation output current (u u Id) for the proposed architecture is 361.5 mA/mm, with a Vth of 1.63V, marking increases of 98.6% and 0.08%over the traditional superjunction CAVET, respectively. Simultaneously, the breakdownvoltage (Vbr) of the designed device is recorded at 12064 V, and the specific on-resistance(Ron,sp) is 6.45 Ω·mm, showcasing a enhancement figure of merit (FOM) of 32.9% incomparison to the traditional superjunction CAVET.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter