Abstract:Ultraviolet (UV) photodetectors are key devices required in the industrial, military, space, environmental, and biological fields. The Schottky barrier (SB)-MOSFET, with its high hole and electron barrier, and given its extremely low dark current, has broad development prospects in the optoelectronics field. We analyze the effects of trap states on the output characteristics of an inversion mode n-channel GaN SB-MOSFET using TCAD simulations. At the oxide/GaN interface below the gate, it was demonstrated that shallow donor-like traps were responsible for degrading the subthreshold swing (SS) and off-state current density (Ioff), while deep donor-like traps below the Fermi energy level were insignificant. In addition, shallow acceptor-like traps shifted the threshold voltage (Vt) positively and deteriorated the SS and on-state current density (Ion), while deep acceptor-like traps acted on a fixed charge. The output characteristics of the GaN SB-MOSFET were related to the resistive GaN path and the tunneling rate due to the traps at the metal (source, drain)/GaN interface. For the UV responses, the main mechanism for the negative Vt shift and the increases in the Ion and spectral responsivity was related to the photo-gating effect caused by light-generated holes trapped in the shallow trap states. These results will provide insights for UV detection technology and for a high-performance monolithic integration of the GaN SB-MOSFET.

Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs

Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the Role of Traps at the InGaAs/lnGaN Junction

Suppression of Anomalously Large Threshold Voltage in Wafer-Bonded Vertical Transistors by Enhancing Critical Field to Impact Ionization

Impact of Gate-Aperture Overlap on the Channel-Pinch off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor

InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (Bavets)

Controlling Electronic Properties of Wafer-Bonded Interfaces among Dissimilar Materials: A Path to Developing Novel Wafer-Bonded Devices

Effective passivation of p- and n- type In0.53Ga0.47As in achieving low leakage current, low interfacial traps, and low border traps

Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration

High-Pressure Deuterium Annealing for Trap Passivation for a 3-D Integrated Structure

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs

Border Trap Analysis and Reduction in ALD-high-k InGaAs Gate Stacks

Virtual-Body P-Gan Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Suppressing the Excess OFF-state Current of Short-Channel InAs Nanowire Field-Effect Transistors by Nanoscale Partial-Gate

Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation P-Gan Gate HEMT Via Light/Hole Pumping

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

(Invited) Border Trap Density in Al2O3/InGaAs MOS: Dependence on Hydrogen Passivation and Bias Temperature Stress

High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

Normally-off Al 2 O 3 /GaN MOSFET: Role of border traps on the device transport characteristics

Buffer trapping-induced R<inf>ON</inf> degradation in GaN-on-Si power transistors: Role of electron injection from Si substrate