Abstract:GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced by near-junction Joule-heating, which degrades device performance and reliability. Increasing the TBC between GaN and SiC will aid in the heat dissipation of GaN-on-SiC power devices, taking advantage of the high thermal conductivity of the SiC substrate. However, a good understanding of the TBC of this technically important interface is still lacking due to the complicated nature of interfacial heat transport. In this work, a lattice-mismatch-insensitive surface activated bonding method is used to bond GaN directly to SiC and thus eliminating the AlN layer altogether. This allows for the direct integration of high quality GaN layers with SiC to create a high thermal boundary conductance interface. TDTR is used to measure the thermal properties of the GaN thermal conductivity and GaN-SiC TBC. The measured GaN thermal conductivity is larger than that of GaN grown by MBE on SiC, showing the impact of reducing the dislocations in the GaN near the interface. High GaN-SiC TBC is observed for the bonded GaN-SiC interfaces, especially for the annealed interface whose TBC (230 MW/m2-K) is close to the highest values ever reported. To understand the structure-thermal property relation, STEM and EELS are used to characterize the interface structure. The results show that, for the as-bonded sample, there exists an amorphous layer near the interface for the as bonded samples. This amorphous layer is crystallized upon annealing, leading to the high TBC found in our work. Our work paves the way for thermal transport across bonded interfaces, which will impact real-world applications of semiconductor integration and packaging.

Observations of Interfaces in Direct Wafer-Bonded InP–GaAs Structures

Study on Infrared Absorption of Interfaces in Direct Wafer Bonded InP-GaAs Structures

Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions

Optical Properties of Direct Wafer Bonded Micro-Cavity Structures

Interface Layers in In0.532ga0.468as/Inp Superlattices

Characteristics of Direct Wafer Bonded InP Materials

Low Temperature Direct InP/SOI Wafer Bonding Based on Hydrophilic/hydrophobic Treatment

Study of InP/SOI Wafer Bonding Based on Wet Surface Activation Treatment

Controlling Electronic Properties of Wafer-Bonded Interfaces among Dissimilar Materials: A Path to Developing Novel Wafer-Bonded Devices

Low Temperature Au-In-Au Metallic Bonding and Its Application in the Fabrication of Vcsels

Optical and Interfacial Properties of Epitaxially Fused GaInP/Si Heterojunction

Comparison of processing-induced deformations of InP bonded to Si determined by e-beam metrology: Direct vs. adhesive bonding

High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces

Interfacial Morphology and Grain Orientation During Bumpless Direct Cu Bonding

Microstructural characterization of InP films on SOI (001) substrates grown by selective lateral metal-Organic vapor-Phase epitaxy

Bonding mechanisms and electrical properties of Ge/Si and Si/Si bonded wafers achieved by thin microcrystalline Ge interlayer

Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams

Oxides Formation on Hydrophilic Bonding Interface in Plasma-Assisted Inp/Al2o3/Soi Direct Wafer Bonding

Wafer bonding technology and its applications in optoelectronic devices and materials

Wafer-scale bonded GaN–AlN with high interface thermal conductance