Characteristics of Direct Wafer Bonded InP Materials

李宁,韩彦军,郝智彪,孙长征,罗毅
DOI: https://doi.org/10.3969/j.issn.1674-4926.2001.09.026
2001-01-01
Abstract:The direct wafer bonding technology of InP materials was presented. The relationship between the I-V characteristics of the InP/InP bonding interface and the experimental conditions was investigated. Large-area uniform InP/InP wafer bonding interface was obtained at the heating temperature below 650 °C. The I-V characteristics and the mechanical strength of the bonding interface are the same as that of InP single crystal substrate. An InP/InGaAsP MQW laser can directly be bonded with the p-InP substrate, whose efficiency and threshold are higher than that without bonded p-InP substrate.
What problem does this paper attempt to address?