Abstract:There has been considerable interest in low-temperature in-situ integration techniques for the fabrication of hetero-structured substrates and micro/nanosystems. This study presents a novel bonding approach that uses a water vapor-assisted surface activation strategy with neutral oxygen species (NOS). This method enables of highly efficient in-situ bonding process that utilizes the controllable and flexible environment to meet specific integration needs without exposure to the unstable ambient air. The NOS and water vapor increases hydroxyl groups, leading to smoother and more hydrophilic surfaces. The combined effects of NOS and the water vapor result in a larger bonded area ratio and significantly higher bonding energy compared to those activated by NOS alone. Meanwhile, the silicon oxide and quartz glass surfaces avoid being heavily electrically charged. This process thus achieved flawless silicon/quartz glass wafer bonding at 150 degrees C with a high bonding energy (similar to 4 J/m(2)) and Si/Si bonding pairs without any subsequent annealing voids. Then, the bonding pairs have been verified to have high reliability in extreme environments from -65 degrees C to 200 degrees C with no thermal-shocked cracks. The high-quality heterointerfaces could also withstand subsequent mechanical grinding and polishing for silicon-onquartz glass (SOQ) fabrication. Moreover, a SOQ structured microfluidic heat pipe device was successfully fabricated based on the low-temperature in-situ heterogenous bonding. The robust heterointerfaces ensured nonleakage working during the heat dissipation. This facile and cost-effective bonding method is suitable for damage-free heterogeneous integration of active devices, micro/nanofluidic chips, and M/NEMS packaging. It has of great potential in fields such as biochemical analysis, quantum computing, and thermal sensing.

Study of InP/SOI Wafer Bonding Based on Wet Surface Activation Treatment

Low Temperature Direct InP/SOI Wafer Bonding Based on Hydrophilic/hydrophobic Treatment

Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions

Oxides Formation on Hydrophilic Bonding Interface in Plasma-Assisted Inp/Al2o3/Soi Direct Wafer Bonding

Study on Infrared Absorption of Interfaces in Direct Wafer Bonded InP-GaAs Structures

Observations of Interfaces in Direct Wafer-Bonded InP–GaAs Structures

Effect of Combined Hydrophilic Activation on Interface Characteristics of Si/Si Wafer Direct Bonding

Effect of NH4OH Treatment on Plasma‐Assisted InP/Al2O3/SOI Direct Wafer Bonding

Characteristics of Direct Wafer Bonded InP Materials

From Surface Activation to Microfluidic Heat Pipes: an Innovative In-Situ Wafer Level Heterogenous Bonding Method

Low-temperature direct and indirect bonding using plasma activation for 3D integration

Investigation of Plasma Activated Si-Si Bonded Interface by Infrared Image Based on Combination of Spatial Domain and Morphology

Wafer-level InP-Si Covalent Bonding and Defect-Free Heterointerface for Photonic Quantum Systems

Silicon Wafer Bonding by Modified Surface Activated Bonding Methods

Effects of Surface Activation Time on Si-Si Direct Wafer Bonding at Room Temperature

Investigation of Plasma Activation Directions for Low-Damage Direct Bonding

Low-temperature direct bonding of silicon to quartz glass wafer via sequential wet chemical surface activation

Low Temperature Hydrophilic SiC Wafer Level Direct Bonding for Ultrahigh-Voltage Device Applications

Fabrication of SiC-on-insulator Substrate Via a Low-Temperature Plasma Activated Bonding Process

Wafer bonding technology and its applications in optoelectronic devices and materials

Void-Free Room-Temperature Silicon Wafer Direct Bonding Using Sequential Plasma Activation