Abstract:Si-glass bonding is one of the most crucial vacuum packaging methods in semiconductor devices; however, high temperatures (>300 degrees C) are required to achieve a high bonding strength, which limits its applications. Current low-temperature Si-glass bonding requires a humid environment and is not compatible with vacuum environments. In this study, a low-temperature vacuum multistep bonding method based on plasma activation was proposed. Traditional plasma-activated low-temperature bonding relies on water-molecule bridging in the atmosphere to lower the bonding temperature. In contrast, the proposed multistep bonding process uses plasmaactivated vacuum anodic bonding for initial bonding, and then utilizes direct bonding to balance the bonding surface energy and sufficiently eliminate the bonding surface micro gap, thus achieving a high bonding strength of 18 MPa at 150 degrees C under vacuum. The effects of plasma activation on the hydrophilicity, surface morphology, and chemical conditions of the wafer surfaces were investigated. The morphologies of the bonding interfaces under different bonding conditions were characterized, and cross-sectional elemental scanning was used to analyze the microscopic factors. Based on the aforementioned investigations and the gap closure theory, the mechanism of multistep bonding was analyzed. Finally, the proposed bonding method was validated by fabricating micro alkali metal vapor cells. The results demonstrate that the proposed method meets the requirements for vacuum device packing at low temperatures.

Hybrid bonding of GaAs and Si wafers at low temperature by Ar plasma activation

Low temperature Cu/SiO 2 hybrid bonding via 〈1 1 1〉-oriented nanotwinned Cu with Ar plasma surface modification

Direct wafer bonding of Ga2O3–SiC at room temperature

Research on Silicon-Glass Direct Bonding at Room Temperature

Comparative study on GaAs/Si heterojunction fabricated by nitrogen and oxygen plasma activated bonding

Effects of Surface Activation Time on Si-Si Direct Wafer Bonding at Room Temperature

Low Temperature Hydrophilic SiC Wafer Level Direct Bonding for Ultrahigh-Voltage Device Applications

Plasma-activated Silicon–glass High-Strength Multistep Bonding for Low-Temperature Vacuum Packaging

RoomTemperature Si/Si WaferDirect Bonding inAir

Room-Temperature Bonding Using Fluorine Containing Plasma Activation and Its Bonding Mechanism

Silicon Wafer Bonding by Modified Surface Activated Bonding Methods

A novel room-temperature wafer direct bonding method by fluorine containing plasma activation

Direct Bonding of LiNbO3 and GaAs at Room Temperature by Using Activated Si Atom Layer

Fabrication of SiC-on-insulator Substrate Via a Low-Temperature Plasma Activated Bonding Process

Low-temperature Cu/SiO2 Hybrid Bonding Based on Ar/H2 Plasma and Citric Acid Cooperative Activation for Multi-Functional Chip Integration

Effects of argon plasma pretreatment of Si wafers on Si-Si bonding based on Mo/Au interlayers

Mechanisms for room temperature direct wafer bonding

Low-temperature Cu/SiO 2 hybrid bonding based on Ar/H 2 plasma and citric acid cooperative activation for multi-functional chip integration

Void-Free Room-Temperature Silicon Wafer Direct Bonding Using Sequential Plasma Activation

Low-temperature direct and indirect bonding using plasma activation for 3D integration

Water Vapor Containing Plasma Activation for Room-Temperature Bonding