Plasma-enhanced Si-SiC low-temperature bonding based on graphene composite slurry interlayer

Ximing Ye,Jiankun Wan,Xiang Yin,Wenhua Yang,Chao Xie,Chunyan Wu,Li Wang,Linbao Luo

DOI: https://doi.org/10.1016/j.matlet.2021.129710

IF: 3

2021-06-01

Materials Letters

Abstract:Recently, silicon carbide (SiC) has replaced silicon (Si) as a potential material for next-generation power devices. In this study, a Si-SiC low-temperature bonding method based on graphene composite slurry as an interlayer was developed. Ar plasma was used to treat the surfaces of Si and SiC to improve surface hydrophilicity for higher strength bonding. With the increase of discharge power, the root-mean -square (RMS) surface roughness of Si and SiC has obviously increased and the bonding quality was also greatly improved. For 70 W discharge power, the RMS surface roughness values of Si and SiC were 3.22 nm and 1.67 nm respectively, and the bonding strength reached approximately 10 MPa. Through SEM interface analysis, it can be found that a seamless bonding interface was obtained using this bonding process.

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

The paper primarily explores a low-temperature bonding method for silicon (Si) and silicon carbide (SiC) enhanced by plasma, using a graphene composite slurry intermediate layer. The research background is that silicon carbide is gradually becoming a new alternative to silicon materials due to its excellent bandgap, high breakdown electric field, high thermal stability, and chemical inertness, showing potential to address the limitations of silicon materials in many applications. However, due to the lattice mismatch between Si and SiC, preparing SiC on traditional silicon-based materials still faces significant challenges. To overcome this difficulty, this paper proposes a novel low-temperature Si-SiC bonding method using graphene composite slurry as an intermediate layer. Specifically, the study employed argon plasma treatment on the surfaces of Si and SiC to enhance their surface hydrophilicity, thereby achieving a stronger bond. Experimental results indicate that with the increase in discharge power, the root mean square roughness (RMS) of the Si and SiC surfaces significantly increased, and the bonding quality was greatly improved. When the discharge power reached 70 watts, the RMS values of the Si and SiC surfaces were 3.22 nanometers and 1.67 nanometers, respectively, and the bonding strength was about 10 megapascals (MPa). Additionally, interface analysis through scanning electron microscopy (SEM) revealed that this bonding process could achieve a seamless bonding interface. Compared to traditional bonding techniques, this method does not require high temperatures, is cost-effective, and has a simple process, making it suitable for the manufacturing of high-performance power device heat sinks.

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